New semiconducting compounds of diamond type structure

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 1107-1109 ◽  
Author(s):  
C GOODMAN ◽  
R DOUGLAS
Physica ◽  
1954 ◽  
Vol 20 (7-12) ◽  
pp. 1107-1109 ◽  
Author(s):  
C.H.L. Goodman ◽  
R.W. Douglas

Author(s):  
Dang-Rong Liu ◽  
D. B. Williams

It is interesting to note that for the diamond type structure of Si, Ge and diamond, the forbidden {200} reflections in the exact <100> orientation diffraction pattern cannot be seen. In contrast, we also note a standing controversy over the structure of the MgAl2O4, spinel. Its structure was determined long ago by x-ray powder method as Fd3m (the diamond type). However, its electron diffraction pattern taken in the <100> orientation shows weak {200} reflections, which are taken as evidence that the spinel should have the space group F43m (the blende type), rather than Fd3m. Others speculate that these {200} reflections result from the high order Laue zone (HOLZ) reflections, and the spinel should be Fd3m. Nevertheless, still others think that these analyses are not conclusive. We have carefully studied the space group of TiBe2 using the convergent beam electron diffraction technique, and unambiguously demonstrated that its space group must be Fd3m.


Author(s):  
J W Steeds

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.


2002 ◽  
Vol 713 ◽  
Author(s):  
Roman V. Bogdanov ◽  
Yuri F. Batrakov ◽  
Elena V. Puchkova ◽  
Andrey S. Sergeev ◽  
Boris E. Burakov

ABSTRACTAt present, crystalline ceramic based on titanate pyrochlore, (Ca,Gd,Hf,Pu,U)2Ti2O7, is considered as the US candidate waste form for the immobilization of weapons grade plutonium. Naturally occuring U-bearing minerals with pyrochlore-type structure: hatchettolite, betafite, and ellsworthite, were studied in orders to understand long-term radiation damage effects in Pu ceramic waste forms. Chemical shifts (δ) of U(Lδ1)– and U(Lβ1) – X-ray emission lines were measured by X-ray spectrometry. Calculations were performed on the basis of a two-dimensional δLá1- and δLδ1- correlation diagram. It was shown that 100% of uranium in hatchettolite and, probably, 95-100% of uranium in betafite are in the form of (UO2)2+. formal calculation shows that in ellsworthite only 20% of uranium is in the form of U4+ and 80% of the rest is in the forms of U5+ and U6+. The conversion of the initial U4+ ion originally occurring in the pyrochlore structure of natural minerals to (UO2)2+ due to metamict decay causes a significant increase in uranium mobility.


Sign in / Sign up

Export Citation Format

Share Document