High-resolution core level photoelectron spectroscopy on InP(110)

We followed the adsorption of Si on the Ir(111) surface via high resolution core level photoelectron spectroscopy, starting from the clean metal surface up to a coverage exceeding one monolayer.

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Surface oxidation of CdTe nanocrystals—A high resolution core-level photoelectron spectroscopy study

Colloids and Surfaces A Physicochemical and Engineering Aspects ◽

10.1016/j.colsurfa.2005.11.068 ◽

2006 ◽

Vol 286 (1-3) ◽

pp. 1-7 ◽

Cited By ~ 28

Author(s):

A. Lobo ◽

H. Borchert ◽

D.V. Talapin ◽

H. Weller ◽

T. Möller

Keyword(s):

High Resolution ◽

Photoelectron Spectroscopy ◽

Surface Oxidation ◽

Core Level ◽

Spectroscopy Study ◽

Cdte Nanocrystals

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High-resolution hard X-ray photoelectron spectroscopy: Application of valence band and core-level spectroscopy to materials science

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2005.05.016 ◽

2005 ◽

Vol 547 (1) ◽

pp. 98-112 ◽

Cited By ~ 74

Author(s):

Keisuke Kobayashi

Keyword(s):

High Resolution ◽

Valence Band ◽

Photoelectron Spectroscopy ◽

Materials Science ◽

Core Level ◽

X Ray

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High-resolution gas-phase core-level X-ray photoelectron spectroscopy of PH3 and H2S with a synchrotron source: observations of vibrational structure on resolved spin—orbit core (2p) lines

Chemical Physics Letters ◽

10.1016/0009-2614(92)86040-o ◽

1992 ◽

Vol 197 (1-2) ◽

pp. 161-164 ◽

Cited By ~ 16

Author(s):

Ronald G. Cavell ◽

Kim H. Tan

Keyword(s):

High Resolution ◽

Gas Phase ◽

Photoelectron Spectroscopy ◽

Vibrational Structure ◽

Core Level ◽

Spin Orbit ◽

Synchrotron Source ◽

X Ray

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IN-SITU CORE-LEVEL PHOTOELECTRON SPECTROSCOPY OF ADSORBATES ON SURFACES INVOLVING A MOLECULAR BEAM — GENERAL SETUP AND FIRST EXPERIMENTS

Surface Review and Letters ◽

10.1142/s0218625x0200297x ◽

2002 ◽

Vol 09 (02) ◽

pp. 797-801 ◽

Cited By ~ 80

Author(s):

R. DENECKE ◽

M. KINNE ◽

C. M. WHELAN ◽

H.-P. STEINRÜCK

Keyword(s):

High Resolution ◽

Photoelectron Spectroscopy ◽

Molecular Beam ◽

Co Adsorption ◽

Core Level ◽

Supersonic Molecular Beam ◽

Adsorption Sites ◽

Coverage Dependence ◽

Local Pressures

In this contribution we introduce a new apparatus combining high-resolution photoelectron spectroscopy and supersonic molecular beam techniques designed to follow simple surface reactions like adsorption, desorption or oxidation in situ in a time- and temperature-resolved manner. Using high brightness synchrotron radiation high resolution core-level spectra can be obtained in less than 3 s. The molecular beam allows for local pressures of up to 1 · 10-5 mbar and translational energies of the molecules of up to 2 eV in the case of CO. Preliminary examples of CO adsorption on Pt(111) are shown, where kinetic parameters can be derived from the coverage dependence of the different adsorption sites.

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HIGH-RESOLUTION Si2p CORE-LEVEL STUDY OF THE K/Si(111)-(3 × 1) SURFACE

Surface Review and Letters ◽

10.1142/s0218625x02003561 ◽

2002 ◽

Vol 09 (02) ◽

pp. 1235-1239 ◽

Cited By ~ 9

Author(s):

KAZUYUKI SAKAMOTO ◽

H. M. ZHANG ◽

ROGER I. G. UHRBERG

Keyword(s):

High Resolution ◽

Binding Energy ◽

Photoelectron Spectroscopy ◽

Binding Energies ◽

Core Level ◽

Three Components

The structure of the K/Si (111)-(3 × 1) surface was studied by high-resolution core-level photoelectron spectroscopy. Five surface components were observed in the Si 2p core-level spectra. Compared to the bulk component, three components are shifted to lower and two to higher binding energies. The two components with the lowest binding energies are assigned to the top-layer Si atoms bonded to the K atoms with different configurations. The component with highest binding energy has a contribution from the π-bonded Si atoms of the top layer. The two other components originate from the Si atoms of the second and third layers.

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Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces As Determined By High Resolution X-Ray Photoelectron Spectroscopy

MRS Proceedings ◽

10.1557/proc-386-249 ◽

1995 ◽

Vol 386 ◽

Author(s):

J. L. Alay ◽

M. Fukuda ◽

C. H. Bjorkman ◽

K. Nakagawa ◽

S. Sasaki ◽

...

Keyword(s):

High Resolution ◽

Valence Band ◽

Density Of States ◽

Photoelectron Spectroscopy ◽

Oxide Thickness ◽

Core Level ◽

Band Alignment ◽

X Ray ◽

Charging Effect

ABSTRACTUltra-thin SiO2/Si(111) interfaces have been studied by high resolution x-ray photoelectron spectroscopy. The deconvolution of the Si 2p core-level peak reveals the presence of the suboxide states Si3+ and Si1+ and the nearly complete absence of Si2+. The energy shifts found in the Si 2p and O is core-level peaks arising from charging effects arc carefully corrected. The valence band density of states for ultra-thin (1.8 - 3.7 nm thick) SiO2 is obtained by subtracting the bulk Si contribution from the measured spcctrum and by taking into account the charging effect of SiO2 and bulk Si. Thus obtained valence band alignment of ultra-thin SiO2/Si(111) interfaces is found to be 4.36 ± 0.10 eV regardless of oxide thickness.

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