Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation

2001 ◽  
Vol 280 (1-3) ◽  
pp. 150-155 ◽  
Author(s):  
Florence Jolly ◽  
François Rochet ◽  
Georges Dufour ◽  
Christoph Grupp ◽  
Amina Taleb-Ibrahimi
Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7085-7094 ◽  
Author(s):  
Mauro Satta ◽  
Paolo Lacovig ◽  
Nicoleta Apostol ◽  
Matteo Dalmiglio ◽  
Fabrizio Orlando ◽  
...  

We followed the adsorption of Si on the Ir(111) surface via high resolution core level photoelectron spectroscopy, starting from the clean metal surface up to a coverage exceeding one monolayer.


1981 ◽  
Vol 4 ◽  
Author(s):  
F.J. Himpsel ◽  
D.E. Eastman ◽  
P. Heimann ◽  
B. Reihl ◽  
C.W. White ◽  
...  

ABSTRACTWe have studied the valence band and surface-core-level states for laser-annealed, thermally-annealed, and cleaved Ge(111) and Si(l11) surfaces with high resolution photoelectronspectroscopy using synchrotron radiation. For the annealed surfaces we find two surface states near the top of the valence band as well as characteristic surface core level spectra. These indicate the existence of a common local bonding geometry for all these surfaces. We observe that the (1 × 1) and cleaved (2 × 1) surfaces are not related as recently reported for Si.


2019 ◽  
Vol 3 (2) ◽  
pp. 385-390
Author(s):  
Olivier J. Renault ◽  
Eugénie Martinez ◽  
Lionel Fourdrinier ◽  
Laurent Clavelier ◽  
Nick Barrett ◽  
...  

1991 ◽  
Vol 43 (17) ◽  
pp. 14301-14304 ◽  
Author(s):  
G. Le Lay ◽  
D. Mao ◽  
A. Kahn ◽  
Y. Hwu ◽  
G. Margaritondo

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