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2022 ◽  
Vol 40 (2) ◽  
pp. 023201
Author(s):  
Arjun Subedi ◽  
Detian Yang ◽  
Yu Yun ◽  
Xiaoshan Xu ◽  
Peter A. Dowben

2D Materials ◽  
2021 ◽  
Author(s):  
Archit Dhingra ◽  
Alexey Lipatov ◽  
Haidong Lu ◽  
Katerina Chagoya ◽  
Joseph Dalton ◽  
...  

Abstract GeI2 is an interesting two-dimensional (2D) wide-band gap semiconductor because of diminished edge scattering due to an absence of dangling bonds. Angle-resolved x-ray photoemission spectroscopy (ARXPS) indicates a germanium rich surface, and a surface to bulk core-level shift of 1.8 eV in binding energy, between the surface and bulk components of the Ge 2p3/2 core-level, making clear that the surface is different from the bulk. Temperature dependent studies indicate an effective Debye temperature (θD ) of 186 ± 18 K for the germanium x-ray photoemission spectroscopy (XPS) feature associated with the surface. These measurements also suggest an unusually high effective Debye temperature for iodine (587 ± 31 K), implying that iodine is present in the bulk of the material, and not the surface. From optical absorbance, GeI2 is seen to have an indirect (direct) optical band gap of 2.60 (2.8) ± 0.02 (0.1) eV, consistent with the expectations. Temperature dependent magnetometry indicates that GeI2 is moment paramagnetic at low temperatures (close to 4 K) and shows a diminishing saturation moment at high temperatures (close to 300 K and above).


2021 ◽  
Vol 11 (4) ◽  
Author(s):  
T. P. H. Sidiropoulos ◽  
N. Di Palo ◽  
D. E. Rivas ◽  
S. Severino ◽  
M. Reduzzi ◽  
...  

Electronics ◽  
2021 ◽  
Vol 10 (22) ◽  
pp. 2748
Author(s):  
Minkyu Song ◽  
Junyeon Lee ◽  
Taeweon Suh ◽  
Gunjae Koo

Since cache side-channel attacks have been serious security threats to multi-tenant systems, there have been several studies to protect systems against the attacks. However, the prior studies have limitations in determining only the existence of the attack and/or occupying too many computing resources in runtime. We propose a low-overhead pinpointing solution, called RT-Sniper, to overcome such limitations. RT-Sniper employs a two-level filtering mechanism to minimize performance overhead. It first monitors hardware events per core and isolates a suspected core to run a malicious process. Then among the processes running on the selected core, RT-Sniper pinpoints a malicious process through a per-process monitoring approach. With the core-level filtering, RT-Sniper has an advantage in overhead compared to the previous works. We evaluate RT-Sniper against Flush+Reload and Prime+Probe attacks running SPEC2017, LMBench, and PARSEC benchmarks on multi-core systems. Our evaluation demonstrates that the performance overhead by RT-Sniper is negligible (0.3% for single-threaded applications and 2.05% for multi-threaded applications). Compared to the previous defense solutions against cache side-channel attacks, RT-Sniper exhibits better detection performance with lower performance overhead.


2021 ◽  
Vol 11 (4) ◽  
Author(s):  
Keisuke Higashi ◽  
Mathias Winder ◽  
Jan Kuneš ◽  
Atsushi Hariki
Keyword(s):  
X Ray ◽  

2021 ◽  
Vol 104 (16) ◽  
Author(s):  
Davide Curcio ◽  
Sahar Pakdel ◽  
Klara Volckaert ◽  
Jill A. Miwa ◽  
Søren Ulstrup ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Artur Born ◽  
Fredrik O. L. Johansson ◽  
Torsten Leitner ◽  
Danilo Kühn ◽  
Andreas Lindblad ◽  
...  

AbstractThe chemical shift of core level binding energies makes electron spectroscopy for chemical analysis (ESCA) a workhorse analytical tool for science and industry. For some elements, close lying and overlapping spectral features within the natural life time broadening restrict applications. We establish how the core level binding energy chemical shift can be picked up experimentally by the additional selectivity through Auger electron photoelectron coincidence spectroscopy (APECS). Coincident measurement of Ni 3p photoemission with different MVV Auger regions from specific decay channels, narrows the 3p core-levels to a width of 1.2 eV, resolves the spin–orbit splitting of 1.6 eV and determines the chemical shift of Ni 3p levels of a Ni(111) single crystal and its oxidized surface layer to 0.6 eV.


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