InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates using InP metamorphic buffer layer
2002 ◽
Vol 46
(10)
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pp. 1541-1544
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2003 ◽
Vol 50
(5)
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pp. 1411-1413
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1993 ◽
Vol 32
(Part 1, No. 11A)
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pp. 4923-4927
2002 ◽
Vol 31
(3)
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pp. 196-199
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2009 ◽
Vol 30
(11)
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pp. 1119-1121
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