Liquid-phase epitaxial growth of InGaP and InGaAsP on GaAs0.69P0.31 substrates with application to visible light-emitting diodes
1977 ◽
Vol 124
(8)
◽
pp. 1285-1289
◽
1979 ◽
Vol 47
(1-3)
◽
pp. 45-50
1976 ◽
Vol 15
(7)
◽
pp. 1219-1227
◽
1982 ◽
Vol 43
(C5)
◽
pp. C5-3-C5-10
◽
Keyword(s):
Keyword(s):