Two-dimensional effects at the Fermi level of the c(2×2)-MnCu/Cu() surface alloy

2003 ◽  
Vol 524 (1-3) ◽  
pp. 164-172 ◽  
Author(s):  
S Gallego ◽  
F Soria ◽  
M.C Muñoz
Keyword(s):  
Fermi Level ◽  
Surface Alloy ◽  
Two Dimensional ◽  
Dimensional Effects

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

Polarimetric Image Sensor and Fermi Level Shifting Induced Multi‐Channel Transition Based on Two‐dimensional PdPS

2021 ◽  
pp. 2107206
Author(s):  
Xingang Wang ◽  
Tao Xiong ◽  
Kai Zhao ◽  
Ziqi Zhou ◽  
Kaiyao Xin ◽  
...  
Keyword(s):  
Fermi Level ◽  
Image Sensor ◽  
Two Dimensional ◽  
Channel Transition

Metal–2D multilayered semiconductor junctions: layer-number dependent Fermi-level pinning

2020 ◽  
Vol 8 (9) ◽  
pp. 3113-3119 ◽  
Author(s):  
Qian Wang ◽  
Yangfan Shao ◽  
Penglai Gong ◽  
Xingqiang Shi
Keyword(s):  
Fermi Level ◽  
Thickness Dependence ◽  
Available P ◽  
Two Dimensional ◽  
Layer Number ◽  
Fermi Level Pinning

Thickness-dependent performance of metal–two-dimensional semiconductor junctions in electronics/optoelectronics have attracted increasing attention but, currently, little knowledge about the micro-mechanism of this thickness dependence is available.

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