Binding of Ru, O, and RuOn (n=1–4) to the Ru(001) surface: Structures, stabilities, and diffusion barriers

1987 ◽  
Vol 183 (1-2) ◽  
pp. 289-301 ◽  
Author(s):  
Alfred B. Anderson ◽  
Mohamed K. Awad
Author(s):  
Mourad Benlattar ◽  
Elyakout Elkoraychy ◽  
Khalid Sbiaai ◽  
M'hammed Mazroui ◽  
Yahia Boughaleb ◽  
...  

2014 ◽  
Vol 1015 ◽  
pp. 598-601
Author(s):  
Han Yan ◽  
Pei Wang

The first principles simulations are performed to investigate the adsorption and diffusion of aluminum, gallium and indium atoms on semi-polar gallium nitrides surface, the calculations are performed by using the Car–Parrinello molecular dynamics (CPMD) method. The aluminum ad-atoms adsorption in path 1 and path 3 are much stable than in path 2. The maximum adsorption energy of path1, path2 and path3 are different, which reveal that a different barrier energy pathway between indium ad-atom diffuse along path 1, path2 and path3. Our calculation results reveal that diffusion barriers of aluminum, gallium and indium atoms on semi-polar gallium nitride surface are anisotropy.


2000 ◽  
Vol 648 ◽  
Author(s):  
Michael I. Haftel

AbstractWe employ surface-embedded-atom-method potentials to investigate the diffusion barriers of vacancies diffusing over and near steps on the low index faces of silver. Barriers for vacancy terrace diffusion, diffusion over step-edges, and diffusion along step edges, including around corners, are calculated. Vacancies are significantly less mobile than adatoms and have large Ehrlich-Schwoebel (ES) barriers on all three faces. For Ag(100) the diffusion barrier for vacancies along step-edges is virtually the same (474 meV) as on the terrace. As in diffusion near the step edge, vacancies encounter a significant increase (213 meV) in the activation barrier when diffusing around the corner of a vacancy island (the corner analogue of the ES barrier), but the excess barrier around a kink all but disappears because exchange diffusion is favorable there. The consequences of the vacancy diffusion barriers on 3D pitting and on island diffusion and coarsening are discussed.


2002 ◽  
Vol 28 (6-7) ◽  
pp. 475-495 ◽  
Author(s):  
Randall T. Cygan ◽  
Kate Wright ◽  
Diana K. Fisler ◽  
Julian D. Gale ◽  
Ben Slater

PLoS Genetics ◽  
2013 ◽  
Vol 9 (12) ◽  
pp. e1003977 ◽  
Author(s):  
Sebiha Cevik ◽  
Anna A. W. M. Sanders ◽  
Erwin Van Wijk ◽  
Karsten Boldt ◽  
Lara Clarke ◽  
...  

1989 ◽  
Vol 7 (2) ◽  
pp. 354-359 ◽  
Author(s):  
C. G. Morgan‐Pond ◽  
J. T. Schick ◽  
S. Goettig

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