Optical and electrical properties of InN thin films grown on ZnO/α-Al2O3 by RF reactive magnetron sputtering

1998 ◽  
Vol 334 (1-2) ◽  
pp. 49-53 ◽  
Author(s):  
Kazuo Ikuta ◽  
Yasushi Inoue ◽  
Osamu Takai
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Optical And Electrical Properties ◽  
Reactive Magnetron ◽  
Α Al2o3

scholarly journals Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

2014 ◽  
Vol 32 (3) ◽  
pp. 457-464 ◽  
Author(s):  
Michal Mazur ◽  
Danuta Kaczmarek ◽  
Eugeniusz Prociow ◽  
Jaroslaw Domaradzki ◽  
Damian Wojcieszak ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
High Energy ◽  
Reactive Magnetron Sputtering ◽  
Optical And Electrical Properties ◽  
Reactive Magnetron ◽  
Tio2 Anatase ◽  
Post Process ◽  
Good Transparency

AbstractIn this work the results of investigations of the titanium-niobium oxides thin films have been reported. The thin films were manufactured with the aid of a modified reactive magnetron sputtering process. The aim of the research was the analysis of structural, optical and electrical properties of the deposited thin films. Additionally, the influence of post-process annealing on the properties of studied coatings has been presented. The as-deposited coatings were amorphous, while annealing at 873 K caused a structural change to the mixture of TiO2 anatase-rutile phases. The prepared thin films exhibited good transparency with transmission level of ca. 50 % and low resistivity varying from 2 Ωcm to 5×10−2 Ωcm, depending on the time and temperature of annealing. What is worth to emphasize, the sign of Seebeck coefficient changed after the annealing process from the electron to hole type electrical conduction.

Effect of reactive magnetron sputtering parameters on structural and electrical properties of hafnium oxide thin films

2014 ◽  
Vol 301 ◽  
pp. 28-33 ◽  
Author(s):  
Magdalena Szymańska ◽  
Sylwia Gierałtowska ◽  
Łukasz Wachnicki ◽  
Marcin Grobelny ◽  
Katarzyna Makowska ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Hafnium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Structural And Electrical Properties

Optical and electrical properties of vanadium pentoxide films prepared by RF reactive magnetron sputtering

2015 ◽  
Vol 23 (9) ◽  
pp. 2438-2445 ◽  
Author(s):  
张圣斌 ZHANG Sheng-bin ◽  
左敦稳 ZUO Dun-wen ◽  
卢文壮 LU Wen-zhuang ◽  
左杨平 ZUO Yang-ping
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Vanadium Pentoxide ◽  
Reactive Magnetron Sputtering ◽  
Optical And Electrical Properties ◽  
Reactive Magnetron

MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF Al/TaNx MULTILAYERS

2010 ◽  
Vol 03 (02) ◽  
pp. 131-133 ◽  
Author(s):  
HONGCHUAN JIANG ◽  
CHAOJIE WANG ◽  
WANLI ZHANG ◽  
XU SI
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Temperature Coefficient ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Temperature Coefficient Of Resistance ◽  
Dc Reactive Magnetron Sputtering

Al/TaN x multilayers were deposited on Al 2 O 3 wafers by DC reactive magnetron sputtering. Microstructure and electrical properties of the samples were investigated in detail. The results show that more compact and smoother surfaces than that of TaN x thin films can be obtained in the Al/TaN x multilayers. Metal Al phases precipitate out from all the Al/TaN x multilayer samples. The main phases in the Al/TaN x multilayers are poor nitrogen phases when sputtered at lower nitrogen partial flux. However, rich nitrogen phases gradually precipitate out from the samples at higher nitrogen partial flux. With the increase of the nitrogen partial flux from 2 to 6%, the resistivity of the Al/TaN x multilayers increases from 640 to 1170 μΩ · cm, and the temperature coefficient of resistance (TCR) of the samples increases from 46 to 350 ppm/°C. Compared with TaN x thin films, the resistivity and TCR of the Al/TaN x multilayers are all higher than those of the TaN x thin films.

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