scholarly journals Influence of oxygen flow rate on structural, optical and electrical properties of copper oxide thin films prepared by reactive magnetron sputtering

2017 ◽  
Vol 211 ◽  
pp. 012025 ◽  
Author(s):  
Thitinai Gaewdang ◽  
Ngamnit Wongcharoen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Copper Oxide ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Optical And Electrical Properties ◽  
Reactive Magnetron

Deposition of Transparent Niobium Oxide Thin Film by DC Reactive Magnetron Sputtering

2016 ◽  
Vol 675-676 ◽  
pp. 217-220
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Flow Rate ◽  
Niobium Oxide ◽  
Oxygen Flow Rate ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering

Transparent niobium oxide thin films were prepared by dc reactive magnetron sputtering under different oxygen flow rate. The niobium oxide thin films have been deposited on silicon wafer and glass substrate from a 99.99% pure niobium target at room temperature. The films were characterized to obtain the relationship between oxygen flow rate and deposition rate, structural, morphology and optical. The result show that the deposition rate decreased with increasing the oxygen flow rate. However, the transmittance spectrum percentage increases with increasing the oxygen flow rate.

Effect of O2 Flow Rate on Structural and Optical Properties of Tantalum Oxide Thin Films Prepared by DC Reactive Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 448-451 ◽  
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Tantalum Oxide ◽  
Oxygen Flow Rate ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering

Tantalum oxide (Ta2O5) thin films have been deposited on glass substrates and silicon wafers (100) by dc reactive magnetron sputtering and with a 99.995% pure tantalum target. The effect of the oxygen flow rate on the crystallinity and optical properties were investigated. The films were characterized by X-ray diffraction patterns, UV-Vis spectrophotometer and spectroscopic ellipsometry. The results show that the deposition rate of Ta2O5 thin films was decreased with the increase in oxygen flow rate. In addition, Ta2O5 thin films deposited at oxygen flow rate higher than 6 sccm could be exhibited sufficiently oxide thin film, the transmittance spectrum percentage indicated 80%, which corresponded to the obtained optical characteristic.

Influence of oxygen flow rate on electrochromic property of WO 3 nanorods prepared by glancing reactive magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6218-6223 ◽  
Author(s):  
Puenisara Limnonthakul ◽  
Wasutep Luangtip ◽  
Chokchai Puttharugsa ◽  
Ittisak Lutchanont ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Electrochromic Property ◽  
Reactive Magnetron

scholarly journals Investigation of structural, optical and electrical properties of (Ti,Nb)Ox thin films deposited by high energy reactive magnetron sputtering

2014 ◽  
Vol 32 (3) ◽  
pp. 457-464 ◽  
Author(s):  
Michal Mazur ◽  
Danuta Kaczmarek ◽  
Eugeniusz Prociow ◽  
Jaroslaw Domaradzki ◽  
Damian Wojcieszak ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
High Energy ◽  
Reactive Magnetron Sputtering ◽  
Optical And Electrical Properties ◽  
Reactive Magnetron ◽  
Tio2 Anatase ◽  
Post Process ◽  
Good Transparency

AbstractIn this work the results of investigations of the titanium-niobium oxides thin films have been reported. The thin films were manufactured with the aid of a modified reactive magnetron sputtering process. The aim of the research was the analysis of structural, optical and electrical properties of the deposited thin films. Additionally, the influence of post-process annealing on the properties of studied coatings has been presented. The as-deposited coatings were amorphous, while annealing at 873 K caused a structural change to the mixture of TiO2 anatase-rutile phases. The prepared thin films exhibited good transparency with transmission level of ca. 50 % and low resistivity varying from 2 Ωcm to 5×10−2 Ωcm, depending on the time and temperature of annealing. What is worth to emphasize, the sign of Seebeck coefficient changed after the annealing process from the electron to hole type electrical conduction.

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