In recent years, a transparent conducting oxide (TCO) SnO2 semiconductor have gained considerable attention due to their potential application in gas sensors. More number of studies on TCO oxide have focused on the semiconducting metal oxides in which an intensive argument is that the transparent semiconductors. The SnO2 thin films were deposited at 400 °C and then annealed at 500 °C and 600 °C and its structural, optical and electrical properties were characterized. The doping stoichiometric ratio was maintained as 4% and the resulting solution was sprayed on glass substrate which was kept at nozzle distance of 25 cm and the spray rate was 10 mL/min. The prepared pure SnO2 thin films have been characterized by different methods such as XRD, FESEM, UV-Vis NIR and EDAX analyses. It was found that the nanocrystalline SnO2 grains possesses structural features of the tetragonal rutile structure. Hence the prepared thin films are justified to be nanocrystalline and also the mean crystalline size decreased with respect to annealing temperature.
Abstract
Nanoscale TiO2-SnO2 films with the Ti:Sn ratio 1:99, 3:97 and 5:95 mol%, respectively, were obtained by solid-phase low-temperature pyrolysis method. The synthesized materials were studied by X-ray phase analysis and scanning electron microscopy (SEM) analysis. Regardless of the modified agents’ concentration, the structure of cassiterite was observed for all synthesized materials. When studying the effect of synthesis parameters on the materials properties, it was shown that both an increase in the Ti4+ concentration and in the calcination temperature leads to an increase in the particle size.
Novel Heteroleptic Tin(II) Complexes Capable of Forming SnO and SnO2 Thin Films Depending on Conditions Using Chemical Solution Deposition
