Non-destructive optical characterization of the surface region in bulk semiconductors and heterostructures

2000 ◽  
Vol 364 (1-2) ◽  
pp. 186-191 ◽  
Author(s):  
V Mizeikis ◽  
K Jarasiunas ◽  
N Lovergine ◽  
K Kuroda
Keyword(s):  
Surface Region ◽  
Optical Characterization ◽  
Bulk Semiconductors ◽  
Non Destructive

scholarly journals Prism coupling as a non destructive tool for optical characterization of (Al,Ga) nitride compounds

2000 ◽  
Vol 5 (S1) ◽  
pp. 747-753
Author(s):  
E. Dogheche ◽  
B. Belgacem ◽  
D. Remiens ◽  
P. Ruterana ◽  
F. Omnes
Keyword(s):  
Theoretical Approach ◽  
Optical Characterization ◽  
Structural Defects ◽  
Optical Data ◽  
Electronic Microscopy ◽  
Microscopy Analysis ◽  
Optical Behavior ◽  
Non Destructive ◽  
Good Agreement

An optical characterization technique is proposed for GaN based compounds deposited on sapphire. In AlGaN films grown by MOCVD, the film optical behavior and the substrate to layer interface are qualified from the measured optical data. The experimental and theoretical approach used for this purpose is described in detail. The results clearly show bending effects at the interface which may be related to structural defects; a good agreement with transmission electronic microscopy analysis is obtained.

Prism Coupling as a Non Destructive Tool for Optical Characterization of (Al,Ga) Nitride Compounds

1999 ◽  
Vol 595 ◽  
Author(s):  
E. Dogheche ◽  
B. Belgacem ◽  
D. Remiens ◽  
P. Ruterana ◽  
F. Omnes
Keyword(s):  
Theoretical Approach ◽  
Optical Characterization ◽  
Structural Defects ◽  
Optical Data ◽  
Electronic Microscopy ◽  
Microscopy Analysis ◽  
Optical Behavior ◽  
Non Destructive ◽  
Good Agreement

AbstractAn optical characterization technique is proposed for GaN based compounds deposited on sapphire. In AlGaN films grown by MOCVD, the film optical behavior and the substrate to layer interface are qualified from the measured optical data. The experimental and theoretical approach used for this purpose is described in detail. The results clearly show bending effects at the interface which may be related to structural defects; a good agreement with transmission electronic microscopy analysis is obtained.

Crystal Growth and Electro-optical Characterization of In2Se2.7Sb0.3 Compound

2020 ◽  
Vol 12 (4) ◽  
pp. 04022-1-04022-4
Author(s):  
Piyush Patel ◽  
◽  
S. M. Vyas ◽  
Vimal Patel ◽  
Himanshu Pavagadhi ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Optical Characterization
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