Electronic structure and energy level alignment of Alq3/Al2O3/Al and Alq3/Al interfaces studied by ultraviolet photoemission spectroscopy

2000 ◽  
Vol 363 (1-2) ◽  
pp. 178-181 ◽  
Author(s):  
K.L Wang ◽  
B Lai ◽  
M Lu ◽  
X Zhou ◽  
L.S Liao ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Energy Level ◽  
Photoemission Spectroscopy ◽  
Energy Level Alignment ◽  
Ultraviolet Photoemission Spectroscopy

Electronic structure of lithium phthalocyanine studied by ultraviolet photoemission spectroscopy

2000 ◽  
Vol 253 (1) ◽  
pp. 125-131 ◽  
Author(s):  
Takafumi Kimura ◽  
Michinori Sumimoto ◽  
Shigeyoshi Sakaki ◽  
Hitoshi Fujimoto ◽  
Yukinobu Hashimoto ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoemission Spectroscopy

Photoemission Investigation of the Energy Level Alignment at the Rubrene/metal Interface

2007 ◽  
Vol 1029 ◽  
Author(s):  
Huanjun Ding ◽  
Yongli Gao
Keyword(s):  
Electronic Structure ◽  
Energy Level ◽  
Photoemission Spectroscopy ◽  
Strong Interactions ◽  
Metal Interface ◽  
Interface Dipole ◽  
Inverse Photoemission ◽  
Level Shifts ◽  
Lowest Unoccupied Molecular Orbital ◽  
Inverse Photoemission Spectroscopy

AbstractThe electronic structure of the interfaces between rubrene and various metals, including Au, Ag, Al, and Ca, have been investigated with photoemission and inverse photoemission spectroscopy. The formation of the interface dipole is observed at all interfaces. The Fermi level shifts linearly within the band gap as a function of metal workfunction, until it is pinned at the lowest unoccupied molecular orbital (LUMO) by Ca. Strong interactions take place at the interface between rubrene and Ca, evidenced by the evolution of the valence features.

REVERSAL OF DOPING INDUCED ENERGY LEVEL SHIFT IN ORGANIC SEMICONDUCTORS

2007 ◽  
Vol 06 (02) ◽  
pp. 125-129 ◽  
Author(s):  
HUANJUN DING ◽  
YONGLI GAO
Keyword(s):  
Electronic Structure ◽  
Energy Level ◽  
Organic Semiconductors ◽  
Energy Levels ◽  
Photoemission Spectroscopy ◽  
Level Shift ◽  
Highest Occupied Molecular Orbital ◽  
Energy Level Shift ◽  
Fine Tune ◽  
Gap State

We have investigated the electronic structure of the interface formed by depositing Au on Cs -doped and Na -doped tris(8-hydroxyquinoline) aluminum (Alq) film using ultraviolet and X-ray photoemission spectroscopy (UPS and XPS). The initial Au deposition quenches the Al q gap state caused by the alkali metal doping. Further Au depositions shift gradually the energy levels opposite to that induced by Cs doping, especially the highest occupied molecular orbital (HOMO) that shows approximately full recovery to the pristine Al q position. However, the recovery is only partial for other levels, most noticeably the C 1s core level. The results indicate that the gap state and energy level positions can be decoupled in the organic semiconductors, and that it is possible to fine tune the electronic structure by selective doping in the interface region.

Electronic structure of bathocuproine on metal studied by ultraviolet photoemission spectroscopy

2006 ◽  
Author(s):  
Susumu TOYOSHIMA ◽  
Kazuhisa KUWABARA ◽  
Takeaki SAKURAI ◽  
Tetsuya TAIMA ◽  
Kazuhiro SAITO ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photoemission Spectroscopy ◽  
Ultraviolet Photoemission Spectroscopy
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