3063. Self-masking selective epitaxy by molecular-beam method

Vacuum ◽  
1977 ◽  
Vol 27 (12) ◽  
pp. 658
Keyword(s):  
Molecular Beam ◽  
Selective Epitaxy ◽  
Beam Method

Self‐masking selective epitaxy by molecular‐beam method

1977 ◽  
Vol 48 (3) ◽  
pp. 940-942 ◽  
Author(s):  
Seiichi Nagata ◽  
Tsuneo Tanaka
Keyword(s):  
Molecular Beam ◽  
Selective Epitaxy ◽  
Beam Method

InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method

1986 ◽  
Vol 25 (Part 2, No. 7) ◽  
pp. L598-L600 ◽  
Author(s):  
Toshio Fujii ◽  
Yoshiaki Nakata ◽  
Shunichi Muto ◽  
Satoshi Hiyamizu
Keyword(s):  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Structures ◽  
Beam Method

Measurement of the Condensation Coefficient of Mercury by a Molecular Beam Method

1975 ◽  
Vol 97 (1) ◽  
pp. 83-87 ◽  
Author(s):  
U. Narusawa ◽  
G. S. Springer
Keyword(s):  
Molecular Beam ◽  
Mercury Vapor ◽  
Clean Surface ◽  
Condensation Coefficient ◽  
Mercury Surface ◽  
Liquid Mercury ◽  
Beam Method ◽  
Beam Incident

The condensation coefficient of mercury was determined by measuring the number flux of a mercury vapor beam incident on, and reflected from, a liquid mercury surface. For a clean surface the condensation coefficient was found to be between 0.65 and 1.

Si-MBE SOI

1985 ◽  
Vol 53 ◽  
Author(s):  
T.L. Lin ◽  
S.C. Chen ◽  
K.L. Wang ◽  
S. Iyer
Keyword(s):  
Porous Silicon ◽  
Molecular Beam ◽  
Silicon On Insulator ◽  
Etch Pit Density ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Etch Pit ◽  
Beam Method ◽  
Step Growth ◽  
Van Der Pauw

ABSTRACT100 μm-wide silicon-on-insulator (SOI) structures have been accomplished by utilizing silicon molecular beam epitaxial (Si-MBE) growth on porous silicon anid subsequent lateral-enhanced oxidation of porous silicon through pattern widows. A silicon beam method was used for insitu cleaning of Si surface at 750°C, and the effectiveness of this method was demonstrated by Auger electron spectroscopy and checked by the etch-pit density of the grown film. A two-step growth process of Si MBE was used to grow epitaxial layers of high quality. An electron mobility of 1300 cm2V-1s-1 was obtained by van der Pauw measurements.

Kinetics of deposition of bismuth film by a molecular beam method

1979 ◽  
Vol 86 ◽  
pp. 108-119 ◽  
Author(s):  
A. Kawazu ◽  
Y. Saito ◽  
N. Ogiwara ◽  
T. Otsuki ◽  
G. Tominaga
Keyword(s):  
Molecular Beam ◽  
Bismuth Film ◽  
Beam Method ◽  
Kinetics Of
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