Dynamics of mobile ions in crystals, glasses and melts

1998 ◽  
Vol 105 (1-4) ◽  
pp. 195-208 ◽  
Author(s):  
K Funke
Keyword(s):  
Solar RRL ◽  
2021 ◽  
Author(s):  
Jonas Diekmann ◽  
Pietro Caprioglio ◽  
Moritz H. Futscher ◽  
Vincent M. Le Corre ◽  
Sebastian Reichert ◽  
...  

1994 ◽  
Vol 229 (6) ◽  
pp. 638-644 ◽  
Author(s):  
Lianrui Zhang ◽  
H.Ted Davis ◽  
A.A. Kornyshev ◽  
D.M. Kroll
Keyword(s):  

1976 ◽  
Vol 13 (1) ◽  
pp. 414-418 ◽  
Author(s):  
C. G. Pantano ◽  
D. B. Dove ◽  
G. Y. Onoda
Keyword(s):  

1996 ◽  
Vol 428 ◽  
Author(s):  
Larry Anderson ◽  
Suketu Parikh ◽  
Samuel Nagalingam

AbstractThe reduction of mobile ions--mainly Na+, but also K+, H+ and Li+, is very critical as our gate oxide thickness and Leff decreases. Hot electron induced hydrogen compensation of boron doped silicon changes the PMOS Leff and NPN BVebo. This paper shows how to reduce Na+ by 100X, through the use of Triangular Voltage Sweep (TVS). This paper is designed to give scientists and engineers a case history where we reduced these levels from 1012 to 1010 mobile ions/cm2 in our 0.8μm BiCMOS process. This was accomplished by adding Ammonium Fluoride mixture dips at appropriate steps. For fast feedback, we can non-destructively measure Na, K, and H within 10 minutes of completing phororesist removal at any of the metallization steps using TVS. In addition to BiCMOS, TVS measure is a power tool in Nonvolatile Memories for predicting in-line data retention, when data retention is associated with charge gain.


2016 ◽  
Vol 4 (33) ◽  
pp. 12748-12755 ◽  
Author(s):  
Yuanhang Cheng ◽  
Ho-Wa Li ◽  
Jian Qing ◽  
Qing-Dan Yang ◽  
Zhiqiang Guan ◽  
...  

Mobile ions not only have detrimental effects on device performance but also trigger the degradation of perovskite during device operation.


2019 ◽  
Author(s):  
Moritz Futscher ◽  
Mahesh Gangishetty ◽  
Daniel Congreve ◽  
Bruno Ehrler

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