The Effect of Manganese Doping on Mobile Ions in Perovskite Light-emitting Diodes

Author(s):  
Moritz Futscher ◽  
Mahesh Gangishetty ◽  
Daniel Congreve ◽  
Bruno Ehrler
2019 ◽  
Author(s):  
Moritz Futscher ◽  
Mahesh Gangishetty ◽  
Daniel Congreve ◽  
Bruno Ehrler

2021 ◽  
pp. 2101439
Author(s):  
Teng Lam Shen ◽  
Aswaghosh Loganathan ◽  
Thi Hoai Do ◽  
Chang‐Min Wu ◽  
Yu‐Ting Chen ◽  
...  

Joule ◽  
2018 ◽  
Vol 2 (11) ◽  
pp. 2421-2433 ◽  
Author(s):  
Shaocong Hou ◽  
Mahesh K. Gangishetty ◽  
Qimin Quan ◽  
Daniel N. Congreve

2020 ◽  
pp. 2007596
Author(s):  
Heyong Wang ◽  
Zhan Chen ◽  
Jingcong Hu ◽  
Hongling Yu ◽  
Chaoyang Kuang ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Naresh Kumar Kumawat ◽  
Wolfgang Tress ◽  
Feng Gao

AbstractThe external quantum efficiency of perovskite light-emitting diodes (PeLEDs) has advanced quickly during the past few years. However, under pulsed operation, an operation mode which is important for display and visible light communication, the performance of PeLEDs changes a lot and requires in-depth understanding to facilitate these applications. Here, we report the response of PeLEDs under pulsed operation in the range of 10 Hz to 20 kHz. Beyond transient effects in the low frequencies, we find that for higher frequencies (>500 Hz) the transient electroluminescence intensity depends strongly on the duty cycle. This feature is much more pronounced and of different origin than that in conventional LEDs. We rationalise our experimental observations using a mathematical model and assign these features to the effect of mobile ionic charges in the perovskite. Our work also provides important implications for the operation of PeLEDs under the steady state, where accumulation of mobile ions at the interfaces could be beneficial for high electroluminescence yields but harmful for the long-term stability.


2020 ◽  
Vol 2 (6) ◽  
pp. 1522-1528 ◽  
Author(s):  
Moritz H. Futscher ◽  
Mahesh K. Gangishetty ◽  
Daniel N. Congreve ◽  
Bruno Ehrler

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.


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