Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon

2000 ◽  
Vol 166 (1-4) ◽  
pp. 349-353 ◽  
Author(s):  
N.E. Korsunskaya ◽  
E.B. Kaganovich ◽  
L.Yu. Khomenkova ◽  
B.M. Bulakh ◽  
B.R. Dzhumaev ◽  
...  
1995 ◽  
Vol 405 ◽  
Author(s):  
T. V. Torchinskaya ◽  
N. E. Korsunskaya ◽  
B. R. Dzumaev ◽  
M. K. Sheinkman

AbstractUsing PL, PLE, secondary ion mass spectroscopy (SIMS) and EPR investigations we show in this paper that two luminescence bands with different PL excitation spectra exist on the surface of silicon wires in PS.


2019 ◽  
Vol 672 ◽  
pp. 146-151 ◽  
Author(s):  
M.A. Sulimov ◽  
M.V. Yakushev ◽  
J. Márquez-Prieto ◽  
I. Forbes ◽  
P.R. Edwards ◽  
...  

1992 ◽  
Vol 31 (Part 2, No. 3A) ◽  
pp. L207-L209 ◽  
Author(s):  
Tomoyoshi Motohiro ◽  
Tetsu Kachi ◽  
Fusayoshi Miura ◽  
Yasuhiko Takeda ◽  
Shi-aki Hyodo ◽  
...  

Author(s):  
Zhilin Zhang ◽  
Zhuotong Li ◽  
Biao Mei ◽  
Xueyin Jiang ◽  
Peifang Wu ◽  
...  

1994 ◽  
Vol 358 ◽  
Author(s):  
A. Kux ◽  
M. Ben Chorin

ABSTRACTWe combine photoluminescence excitation spectroscopy and photoconductivity to extract information about the bandgap and particle size distribution of porous silicon. This allows us to specify the influence of size dispersion and to show that different methods to determine absorption probe different parts of the size distribution.


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