Effects of selenisation temperature on photoluminescence and photoluminescence excitation spectra of ZnO/CdS/Cu2ZnSnSe4/Mo/glass

Highly sensitive broadband photothermal spectroscopy with a white-light lamp as the excitation source was developed by combining a Sagnac interferometer and balanced detection with a photothermal deflection method. A probe beam was split by a birefringent crystal CaCO3 into signal and reference beams with a balanced intensity. This balanced detection enabled the measurement of photoexcited thermal relaxation spectra of materials in the air over the whole visible range in the weak excitation limit 50 µW/cm2. The photothermal excitation spectrum of Eu2+-doped CaAlSiN3 phosphors (CASN:Eu2+) with a high luminescent quantum efficiency was measured to be distinctly different from the photoluminescence excitation spectrum which reflects the absorption spectrum, revealing the thermal relaxation mechanism of the phosphor. Assuming a typical non-radiative relaxation from the higher excited states to the lowest excited state and successively to the ground state, it is demonstrated that the photoluminescence efficiency of the phosphors is readily evaluated simply by comparing the photothermal and photoluminescence excitation spectra.

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Photoluminescence excitation spectra of the free exciton emission in 6H–SiC

Materials Science and Engineering B ◽

10.1016/s0921-5107(98)00515-7 ◽

1999 ◽

Vol 61-62 ◽

pp. 265-269 ◽

Cited By ~ 4

Author(s):

I.G Ivanov ◽

T Egilsson ◽

A Henry ◽

E Janzén

Keyword(s):

Free Exciton ◽

Photoluminescence Excitation ◽

Excitation Spectra ◽

Exciton Emission

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Effect of adsorption and desorption processes on photoluminescence excitation spectra of porous silicon

Applied Surface Science ◽

10.1016/s0169-4332(00)00448-7 ◽

2000 ◽

Vol 166 (1-4) ◽

pp. 349-353 ◽

Cited By ~ 6

Author(s):

N.E. Korsunskaya ◽

E.B. Kaganovich ◽

L.Yu. Khomenkova ◽

B.M. Bulakh ◽

B.R. Dzhumaev ◽

...

Keyword(s):

Porous Silicon ◽

Photoluminescence Excitation ◽

Excitation Spectra ◽

Adsorption And Desorption

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Significant blue-shift in photoluminescence excitation spectra of Nd3+:LaF3 potential laser medium at low-temperature

Optical Materials ◽

10.1016/j.optmat.2015.06.020 ◽

2015 ◽

Vol 47 ◽

pp. 462-464 ◽

Cited By ~ 8

Author(s):

Ren Arita ◽

Yuki Minami ◽

Marilou Cadatal-Raduban ◽

Minh Hong Pham ◽

Melvin John Fernandez Empizo ◽

...

Keyword(s):

Low Temperature ◽

Blue Shift ◽

Laser Medium ◽

Photoluminescence Excitation ◽

Excitation Spectra ◽

Significant Blue Shift

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Resonant Photoluminescence Excitation in GaAs Grown Directly on Si

MRS Proceedings ◽

10.1557/proc-116-239 ◽

1988 ◽

Vol 116 ◽

Author(s):

S. Zemon ◽

C. Jagannath ◽

S. K. Shastry ◽

W. J. Miniscalco ◽

G. Lambert

Keyword(s):

Ground State ◽

Heavy Hole ◽

Laser Excitation ◽

Free Exciton ◽

Light Hole ◽

The Other ◽

Organometallic Vapor Phase Epitaxy ◽

Photoluminescence Excitation ◽

Excitation Spectra ◽

Excitation Line

AbstractWe describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light hole photoluminescence (PL) region, one identified with a free exciton process and the other with donor-related transitions. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=l ground state to an n=2 excited state. The PL excitation spectra associated with these features have spectral widths as narrow as 1.5 meV. PL spectral widths of ~3 meV have been attained for the heavy hole exciton band, representing the narrowest value obtained for OMVPE material and an improvement of about 30% over our best previous results.

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