ABSTRACTThe cw proton NMR spectra, spin lattice relaxation times Tx and free induction decay times T*2 were measured in various a-Si:H films deposited by rf-sputtering. All spectra exhibited broad and narrow components, of T*2 ∼ 20 and 45 μsec, respectively. In samples deposited at high rf power, the ratio of the integrated intensities of the broad and narrow lines was ∼ 1.5. These samples, which apparently contain mainly bulk monohydride bonds and a low volume fraction of microvoids, exhibit long-range H motion. In a sample deposited at low rf power, this ratio was ∼ 3. These samples, which contain significant dihydride and microvoid content, show a dramatic suppression of the long-range H motion. The T1 of both types of samples exhibits a clear minimum at ∼ 30 K, indicative of relaxation by H2 trapped in microvoids. The absolute values of T1, however, are smaller in the sample deposited at low rf power (0.1 sec at the minimum as opposed to 0.3 to 1.0 sec at the minimum), apparently due to a larger ratio of molecular hydrogen to bonded hydrogen. After annealing for 24 hours at 294°C, the ratio of broad-to-narrow components increases to > 10 in all samples, and the magnitudes of the T1 minima increase to about 1 sec in all samples.
