Langmuir-probe measurements of a pulsed and steady-state rf glow-discharge source and of an rf planar-magnetron source

1996 ◽  
Vol 51 (13) ◽  
pp. 1629-1646 ◽  
Author(s):  
M.J. Heintz ◽  
G.M. Hieftje
1998 ◽  
Vol 35 (9) ◽  
pp. 281-283 ◽  
Author(s):  
Mikhail Belkin ◽  
Joseph W. Waggoner ◽  
Joseph A. Caruso

1988 ◽  
Vol 131 ◽  
Author(s):  
W. J. Varhue ◽  
S. Krause ◽  
J. Dea ◽  
C. O. Jung

ABSTRACTThe growth of thin Si films by RF glow discharge undergoes a transition from amorphous to microcrystalline as power density is increased. This results in a substantial change in the film's electrical conductivity and activation energy for electrical conduction. The RF glow discharge has been characterized in terms of plasma density, plasma potential and electron temperature with emissive Langmuir Probe measurements. The structural transition has been observed with a transmission electron microscope.


1998 ◽  
Vol 98 (1-3) ◽  
pp. 1426-1432 ◽  
Author(s):  
P.-Y. Jouan ◽  
A.-C. Vanderbecq ◽  
J.-P. Dauchot ◽  
M. Wautelet ◽  
M. Hecq

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