Carrier transport in multi-terminal superconductor/two-dimensional electron gas Josephson junctions

2001 ◽  
Vol 352 (1-4) ◽  
pp. 144-148 ◽  
Author(s):  
V.A. Guzenko ◽  
Th. Schäpers ◽  
R.P. Müller ◽  
A.A. Golubov ◽  
A. Brinkman ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

scholarly journals Electrical transport of an AlGaN/GaN two-dimensional electron gas

2000 ◽  
Vol 5 (S1) ◽  
pp. 619-625 ◽  
Author(s):  
A. Saxler ◽  
P. Debray ◽  
R. Perrin ◽  
S. Elhamri ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Mobility Spectrum ◽  
Single Carrier ◽  
Dimensional Electron Gas

An AlxGa1−xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm−2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10−12 s.

Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Saxler ◽  
P. Debray ◽  
R. Perrin ◽  
S. Elhamri ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Mobility Spectrum ◽  
Single Carrier ◽  
Dimensional Electron Gas

AbstractAn AlxGa1-xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm-2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10-12 s.

Anisotropic bilinear magnetoresistance in (110) SrTiO3 -based two-dimensional electron gas

2021 ◽  
Vol 104 (4) ◽  
Author(s):  
Jine Zhang ◽  
Hui Zhang ◽  
Xiaobing Chen ◽  
Jing Zhang ◽  
Shaojin Qi ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas
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