Sub-Bandgap Laser Light-Induced Excess Carrier Transport Between Surface States and Two-Dimensional Electron Gas Channel in AlGaN/GaN Structure

2010 ◽  
Vol 46 (1) ◽  
pp. 112-115 ◽  
Author(s):  
Yun-Chorng Chang ◽  
Jinn-Kong Sheu ◽  
Yun-Li Li
Keyword(s):  
Carrier Transport ◽  
Laser Light ◽  
Electron Gas ◽  
Surface States ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Excess Carrier ◽  
Gas Channel ◽  
Dimensional Electron Gas

scholarly journals Хаотический потенциал заряженных дислокаций в гетероконтактах III-нитридов

2021 ◽  
Vol 47 (1) ◽  
pp. 12
Author(s):  
В.Б. Бондаренко ◽  
А.В. Филимонов ◽  
Ravi Kumar
Keyword(s):  
Electrostatic Field ◽  
Dielectric Response ◽  
Spatial Dispersion ◽  
Electron Gas ◽  
Surface States ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Contact Plane ◽  
Dimensional Electron Gas

In this work, the structure of the chaotic potential in heterocontacts of III-nitrides, caused by the electrostatic field of charged dislocations, is studied. Taking into account the spatial dispersion of the dielectric response of a two-dimensional electron gas, the amplitude and scale of the chaotic potential in the contact plane are determined. The dependence of the parameters of the chaotic potential on the surface states density and the concentration of dislocations is shown.

Carrier transport in multi-terminal superconductor/two-dimensional electron gas Josephson junctions

2001 ◽  
Vol 352 (1-4) ◽  
pp. 144-148 ◽  
Author(s):  
V.A. Guzenko ◽  
Th. Schäpers ◽  
R.P. Müller ◽  
A.A. Golubov ◽  
A. Brinkman ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

scholarly journals Electrical transport of an AlGaN/GaN two-dimensional electron gas

2000 ◽  
Vol 5 (S1) ◽  
pp. 619-625 ◽  
Author(s):  
A. Saxler ◽  
P. Debray ◽  
R. Perrin ◽  
S. Elhamri ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Mobility Spectrum ◽  
Single Carrier ◽  
Dimensional Electron Gas

An AlxGa1−xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm−2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10−12 s.

Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Saxler ◽  
P. Debray ◽  
R. Perrin ◽  
S. Elhamri ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Mobility Spectrum ◽  
Single Carrier ◽  
Dimensional Electron Gas

AbstractAn AlxGa1-xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm-2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10-12 s.

scholarly journals Spin transport in polarization induced two-dimensional electron gas channel in c-GaN nano-wedges

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Swarup Deb ◽  
Subhabrata Dhar
Keyword(s):  
Strong Dependence ◽  
Electron Gas ◽  
Vertical Plane ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Spin Orientation ◽  
Two Dimensional Electron Gas ◽  
Gas Channel ◽  
Dimensional Electron Gas ◽  
Rashba Coupling

AbstractA two-dimensional electron gas (2DEG), which has recently been shown to develop in the central vertical plane of a wedge-shaped c-oriented GaN nanowall due to spontaneous polarization effect, offers a unique scenario, where the symmetry between the conduction and valence band is preserved over the entire confining potential. This results in the suppression of Rashba coupling even when the shape of the wedge is not symmetric. Here, for such a 2DEG channel, relaxation time for different spin projections is calculated as a function of donor concentration and gate bias. Our study reveals a strong dependence of the relaxation rate on the spin-orientation and density of carriers in the channel. Most interestingly, relaxation of spin oriented along the direction of confinement has been found to be completely switched off. Upon applying a suitable bias at the gate, the process can be switched on again. Exploiting this fascinating effect, an electrically driven spin-transistor has been proposed.

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