scholarly journals Electrical transport of an AlGaN/GaN two-dimensional electron gas

2000 ◽  
Vol 5 (S1) ◽  
pp. 619-625 ◽  
Author(s):  
A. Saxler ◽  
P. Debray ◽  
R. Perrin ◽  
S. Elhamri ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Mobility Spectrum ◽  
Single Carrier ◽  
Dimensional Electron Gas

An AlxGa1−xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm−2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10−12 s.

Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas

1999 ◽  
Vol 595 ◽  
Author(s):  
A. Saxler ◽  
P. Debray ◽  
R. Perrin ◽  
S. Elhamri ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Mobility Spectrum ◽  
Single Carrier ◽  
Dimensional Electron Gas

AbstractAn AlxGa1-xN/GaN two-dimensional electron gas structure with x = 0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm-2 and a mobility of 1.9 × 104 cm2/Vs at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov-de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov-de Haas oscillations. The quantum lifetime was about one-fifth of the transport lifetime of 2.3 × 10-12 s.

Carrier transport in multi-terminal superconductor/two-dimensional electron gas Josephson junctions

2001 ◽  
Vol 352 (1-4) ◽  
pp. 144-148 ◽  
Author(s):  
V.A. Guzenko ◽  
Th. Schäpers ◽  
R.P. Müller ◽  
A.A. Golubov ◽  
A. Brinkman ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Carrier Transport ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Electron transport within a zinc-oxide-based two-dimensional electron gas: The impact of variations in the electron effective mass

2014 ◽  
Vol 1674 ◽  
Author(s):  
Walid A. Hadi ◽  
Erfan Baghani ◽  
Michael S. Shur ◽  
Stephen K. O’Leary
Keyword(s):  
Zinc Oxide ◽  
Electron Transport ◽  
Effective Mass ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Dimensional Electron Gas ◽  
The Impact

ABSTRACTWe examine the electron transport that occurs within a zinc-oxide-based two-dimensional electron gas using Monte Carlo simulations. The sensitivity of the results to variations in the lowest energy conduction band valley electron effective mass is examined. Increased values of the electron effective mass result in diminished electron drift velocities and reduced sensitivity to the free electron concentration. In agreement with our previous studies for a fixed value of the electron effective mass [11], we find that the reduced scattering due to the screening of the impurity and polar optical scattering leads to a slightly higher mobility of the 2DEG at low-fields but reduces the peak velocity, since gaining a higher energy due to the reduced polar optical phonon scattering enhances the effects of the non-parabolicity within this material.

scholarly journals Optical Performance of Two Dimensional Electron Gas and GaN:С Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate

2021 ◽  
Vol 11 (13) ◽  
pp. 6053
Author(s):  
Roman B. Adamov ◽  
Daniil Pashnev ◽  
Vadim A. Shalygin ◽  
Maria D. Moldavskaya ◽  
Maxim Ya. Vinnichenko ◽  
...  
Keyword(s):  
High Frequency ◽  
Electron Gas ◽  
Buffer Layers ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Terahertz Time Domain Spectroscopy ◽  
Two Dimensional Electron Gas ◽  
Electron Effective Mass ◽  
Dimensional Electron Gas

Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were developed as the method for the investigation of high-frequency characteristics of two-dimensional electron gas and GaN:С buffer layers in AlGaN/AlN/GaN heterostructures grown on a semi-insulating SiC substrate. The reflectance and transmittance spectra of the selected heterostructure layers were studied after the top layers were removed by a reactive ion etching. Results were numerically analyzed using the transfer matrix method taking into account the high-frequency electron conductivity via a Drude model and complex dielectric permittivity of each epitaxial layer via a one-phonon-resonance approximation. Good agreement between the experiment and theory was achieved revealing the temperature dependent electron effective mass in AlGaN/AlN/GaN high electron mobility transistor structures and the small damping factors of optical phonons due to high crystal quality of the epitaxial layers fabricated on the SiC substrate.

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