Enhancement of the critical current across a YBCO thin-film grain boundary junction due to Abrikosov vortices

2002 ◽  
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E.E. Mitchell ◽  
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D.B. Lowe ◽  
C. Andrikidis ◽  
...  
1998 ◽  
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Š. Beňačka ◽  
V. Štrbik ◽  
Š. Chromik ◽  
R. Adam ◽  
M. Darula ◽  
...  

2018 ◽  
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Tao Hua ◽  
Mei Yu ◽  
Haifeng Geng ◽  
Weiwei Xu ◽  
Yapeng Lu ◽  
...  

1993 ◽  
Vol 6 (3) ◽  
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Author(s):  
M. V. Indenbom ◽  
A. Forkl ◽  
H. Kronm�ller ◽  
H. -U. Habermeier

2018 ◽  
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Ahmed Taoufik ◽  
Abella Bouaaddi ◽  
Hassan Elouaddi ◽  
Ahmed Tirbiyine ◽  
...  

1991 ◽  
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H. Kurosawa ◽  
K. Miyagawa ◽  
Y. Hirotsu ◽  
M. Era ◽  
...  

Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.


Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


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