Intrinsic model for high Tc superconducting field effect transistor operating in the weak inversion region

Physica C Superconductivity ◽

10.1016/s0921-4534(97)01350-6 ◽

1997 ◽

Vol 282-287 ◽

pp. 2499-2500

Author(s):

Q.Y. Cai ◽

J.F. Jiang ◽

B. Shen ◽

M.Z. Tong

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Weak Inversion ◽

High Tc ◽

Inversion Region ◽

Effect Transistor

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Possible high Tc superconductivity in the doped channel of a field effect transistor

AIP Advances ◽

10.1063/1.5111432 ◽

2019 ◽

Vol 9 (8) ◽

pp. 085230

Author(s):

M. Sahraoui-Tahar

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

High Tc ◽

High Tc Superconductivity ◽

Effect Transistor

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High-Tc field-effect transistor-like structure made from YBCO ultrathin films

Progress in High-Temperature Superconducting Transistors and Other Devices II ◽

10.1117/12.2321828 ◽

1992 ◽

Author(s):

X. X. Xi

Keyword(s):

Ultrathin Films ◽

Field Effect ◽

Field Effect Transistor ◽

High Tc ◽

Effect Transistor

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Temporal response of a high‐Tc superconducting field effect transistor

Applied Physics Letters ◽

10.1063/1.115083 ◽

1995 ◽

Vol 67 (14) ◽

pp. 2075-2077 ◽

Author(s):

R. Schneider ◽

R. Auer

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Temporal Response ◽

High Tc ◽

Effect Transistor

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Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region

Journal of Applied Physics ◽

10.1063/1.4808453 ◽

2013 ◽

Vol 113 (21) ◽

pp. 214507 ◽

Author(s):

Edward Namkyu Cho ◽

Yong Hyeon Shin ◽

Ilgu Yun

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Current Model ◽

Drain Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Inversion Region ◽

Effect Transistor

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Oxide Field-Effect Transistor with Polymer-Based Gate Insulator

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.139.207 ◽

2019 ◽

Vol 139 (3) ◽

pp. 207-210

Author(s):

Kohei Fujiwara

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Gate Insulator ◽

Effect Transistor

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Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

IEICE Transactions on Electronics ◽

10.1587/transele.e93.c.540 ◽

2010 ◽

Vol E93-C (5) ◽

pp. 540-545 ◽

Author(s):

Dong Seup LEE ◽

Hong-Seon YANG ◽

Kwon-Chil KANG ◽

Joung-Eob LEE ◽

Jung Han LEE ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

IEICE Transactions on Electronics ◽

10.1587/transele.e97.c.677 ◽

2014 ◽

Vol E97.C (7) ◽

pp. 677-682

Author(s):

Sung YUN WOO ◽

Young JUN YOON ◽

Jae HWA SEO ◽

Gwan MIN YOO ◽

Seongjae CHO ◽

...

Keyword(s):

Silicon Substrate ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

Proceedings of Universities ELECTRONICS ◽

10.24151/1561-5405-2019-24-4-407-414 ◽

2019 ◽

Vol 24 (4) ◽

pp. 407-414

Author(s):

Oksana V. Gubanova ◽

◽

Evgeniy V. Kuznetsov ◽

Elena N. Rybachek ◽

Alexander N. Saurov ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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Semiconducting - Carbon Nanotube Field Effect Transistor Based Logic Gates

i-manager’s Journal on Electronics Engineering ◽

10.26634/jele.1.4.1512 ◽

2011 ◽

Vol 1 (4) ◽

pp. 56-60

Author(s):

V. Saravanan ◽

V. Kannan

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Logic Gates ◽

Effect Transistor

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Effects of Differing Carbon Nanotube Field-effect Transistor Architectures

10.21236/ada502660 ◽

2009 ◽

Author(s):

Andrew M. Dorsey ◽

Matthew H. Ervin

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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