InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Effect of the MOS Process on the Work-Function Difference Between the Polysilicon Gates and the Silicon Substrate

1990 ◽  
Vol 182 ◽  
Author(s):  
N. Lifshitz
Keyword(s):  
Integrated Circuit ◽  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Process Variations ◽  
Polysilicon Gate ◽  
Effect Transistor ◽  
Work Function Difference ◽  
Circuit Technology ◽  
Function Difference

AbstractPolysilicon gates are an important element of modem MOS integrated circuit technology. The workfunction difference (ϕps) between the polysilicon gate and the silicon substrate is a vital parameter of the MOS system because it determines the threshold voltage of the field-effect transistor. Ideally, ϕps is determined by the doping level in both polysilicon and the substrate. In reality process variations influence the ϕPS in a tangible way. Some of these effects are reviewed in the present paper.

Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

2011 ◽  
Vol 98 (15) ◽  
pp. 153502 ◽  
Author(s):  
Genquan Han ◽  
Pengfei Guo ◽  
Yue Yang ◽  
Chunlei Zhan ◽  
Qian Zhou ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Silicon Based

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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