Localization of electrons and influence of surface states on the density of states in a tight-binding model on the Penrose tiling

2000 ◽  
Vol 294-296 ◽  
pp. 886-889 ◽  
Author(s):  
E.S Zijlstra ◽  
T Janssen
Keyword(s):  
Density Of States ◽  
Tight Binding ◽  
Surface States ◽  
Penrose Tiling ◽  
Tight Binding Model ◽  
Binding Model ◽  
Localization Of Electrons

Bromine-induced surface states on cleaved GaAs(110) surfaces: experiment and tight-binding model

1992 ◽  
Vol 264 (1-2) ◽  
pp. 23-32 ◽  
Author(s):  
K. Cierocki ◽  
D. Troost ◽  
L. Koenders ◽  
W. Mönch
Keyword(s):  
Tight Binding ◽  
Surface States ◽  
Tight Binding Model ◽  
Binding Model

scholarly journals SURFACE EFFECTS ON THE STATISTICS OF THE LOCAL DENSITY OF STATES IN METALLIC NANOPARTICLES: MANIFESTATION ON THE NMR SPECTRA

2005 ◽  
Vol 19 (25) ◽  
pp. 1285-1294 ◽  
Author(s):  
JOSÉ A. GASCÓN ◽  
HORACIO M. PASTAWSKI
Keyword(s):  
Density Of States ◽  
Metallic Nanoparticles ◽  
Local Density ◽  
Scaling Law ◽  
Tight Binding ◽  
Surface States ◽  
Aluminum Nanoparticles ◽  
Binding Model ◽  
Electronic Density ◽  
Knight Shifts

In metallic nanoparticles, shifts in the ionization energy of surface atoms with respect to bulk atoms can lead to surface bands. Within a simple Tight Binding model we find that the projection of the electronic density of states on these sites presents two overlapping structures. One of them is characterized by the level spacing coming from bulk states and the other arises from the surface states. In very small particles, this effect contributes to an over-broadening of the NMR absorption spectra, determined by the Knight shift distribution of magnetic nuclei. We compare our calculated Knight shifts with experiments on aluminum nanoparticles, and show that the deviation of the scaling law as a function of temperature and particle size can be explained in terms of surface states.

Effects of Molecular Orientational Disorder on the Electronic Structure of K3C60: With the Inclusion of the Tangentially Directed C σ-Orbital

1998 ◽  
Vol 12 (32) ◽  
pp. 3521-3528
Author(s):  
Jing Lu ◽  
Xiangeng Zhao ◽  
Xinwei Zhang ◽  
Liyuan Zhang
Keyword(s):  
Electronic Structure ◽  
Fermi Level ◽  
Conduction Band ◽  
Density Of States ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Orientational Disorder ◽  
Binding Model ◽  
Distance Dependence ◽  
Orbital Approximation

Effects of molecular orientational disorder on the electronic structure of K3C60 are studied using a tight-binding model in which both the 2s and 2p orbitals of C atoms are taken into account. Nearly free of the cut-off distance of the interculster interaction and the form of the distance dependence of the hopping parameters, the orientational disorder always smears out the structure in the conduction-band density of states (DOS), while the value of the DOS at the Fermi level (N(E F )) changes slightly upon disordering. These results are in excellent agreement with the earlier ones based on the single molecular orbital approximation.

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