Crystallization kinetics and dielectric properties of solution deposited, La doped PZT thin films

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

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Frequency dependence of the dielectric properties of La-doped Pb(Zr0.35Ti0.65)O3 thin films

Applied Physics Letters ◽

10.1063/1.1613039 ◽

2003 ◽

Vol 83 (14) ◽

pp. 2892-2894 ◽

Cited By ~ 20

Author(s):

Z. G. Zhang ◽

D. P. Chu ◽

B. M. McGregor ◽

P. Migliorato ◽

K. Ohashi ◽

...

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Frequency Dependence ◽

La Doped

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Dielectric properties of PZT thin films derived by a chemical solution-deposition process on steel substrates

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics ◽

10.1109/isaf.1996.602720 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Seifert ◽

S. Merklein ◽

S. Wahl ◽

D. Sporn

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Chemical Solution Deposition ◽

Deposition Process ◽

Chemical Solution ◽

Solution Deposition ◽

Pzt Thin Films ◽

Steel Substrates

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Application of Sol-Gel Derived Conductive Oxide LaNiO3 in Pyroelectric Detector

Materials Science Forum ◽

10.4028/www.scientific.net/msf.687.233 ◽

2011 ◽

Vol 687 ◽

pp. 233-237

Author(s):

Jing Wang ◽

Chuan Wei Zang ◽

Liang Ying Zhang ◽

Xi Yao

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Bottom Electrode ◽

Infrared Detector ◽

Sol Gel ◽

Voltage Response ◽

Electrical Measurements ◽

Pzt Thin Films ◽

Force Microscopy ◽

Layer Thin Film

Conductive LaNiO3(LNO) thin films are grown on Si(100) substrates by a sol-gel method and their application as the bottom electrode for the growth of sol-gel derived Pb(Zr,Ti)O3(PZT) thin films are studied. Morphology and electrical properties of the multilayer films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), electrical measurements. Experiment results show LNO thin films get highly (110)-oriented perovskite-type structure. Smooth and dense surfaces are observed on LNO thin films. The dielectric properties of PZT films show that PZT/LNO films exhibit worse dielectric properties than those of the PZT/Pt thin films. And LNO thin films prepared by sol-gel methods are not suitable as bottom electrode to deposit PZT thin films. On the other hand, FTIR spectrum and pyroelectric results of LNO thin films reveal that LNO can be used as absorber layer of PT thin films infrared detector with multi-layer thin film thermal insulation structure. At 10Hz, the detectivity (D*) and the voltage response (Rv) of PT thin films are 1.11×107cm·Hz1/2/W, 1.46×103V/W respectively.

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