Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Epitaxial Growth ◽  
Anisotropic Dielectric ◽  
La Doped

Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
The Other ◽  
Field Range ◽  
Anisotropic Dielectric ◽  
Dielectric Nonlinearity ◽  
La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

Frequency dependence of the dielectric properties of La-doped Pb(Zr0.35Ti0.65)O3 thin films

2003 ◽  
Vol 83 (14) ◽  
pp. 2892-2894 ◽  
Author(s):  
Z. G. Zhang ◽  
D. P. Chu ◽  
B. M. McGregor ◽  
P. Migliorato ◽  
K. Ohashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Frequency Dependence ◽  
La Doped

Epitaxial growth and dielectric properties of homologous Srm−3Bi4TimO3m+3 (m=3,4,5,6) thin films

2002 ◽  
Vol 81 (26) ◽  
pp. 5009-5011 ◽  
Author(s):  
S. T. Zhang ◽  
Y. F. Chen ◽  
H. P. Sun ◽  
X. Q. Pan ◽  
Z. G. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Epitaxial Growth

STRUCTURE AND DIELECTRIC PROPERTIES OF La-DOPED LEAD STRONTIUM TITANATE THIN FILMS DERIVED FROM SOL–GEL METHOD

2008 ◽  
Vol 15 (01n02) ◽  
pp. 13-18
Author(s):  
X. T. LI ◽  
C. WU ◽  
W. J. WENG ◽  
G. R. HAN ◽  
P. Y. DU
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ito Glass ◽  
Gel Technique ◽  
La Doped

A series of ( Pb 0.4 Sr 0.6)1-x La 2x/3 TiO 3 (PSLT) thin films were deposited on ITO/glass substrates by sol–gel technique. Their phase status, surface morphology, and dielectric properties were studied by X-ray diffraction, scanning electron microscope, and impedance analyzer, respectively. Results show that the PSLT thin films were consisted of tetragonal perovskite phase PSLT thin films for x < 0.4, and cubic perovskite phase PSLT thin films for x > 0.4. Dielectric properties such as dielectric constants, dielectric tunabilitis, and inharmonic coefficient were characterized as a function of the film composition.

Epitaxial nature and anisotropic dielectric properties of (Pb,Sr)TiO3 thin films on NdGaO3 substrates

2005 ◽  
Vol 86 (14) ◽  
pp. 142902 ◽  
Author(s):  
Y. Lin ◽  
X. Chen ◽  
S. W. Liu ◽  
C. L. Chen ◽  
Jang-Sik Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Anisotropic Dielectric
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