Frequency dependence of the dielectric properties of La-doped Pb(Zr0.35Ti0.65)O3 thin films

2003 ◽  
Vol 83 (14) ◽  
pp. 2892-2894 ◽  
Author(s):  
Z. G. Zhang ◽  
D. P. Chu ◽  
B. M. McGregor ◽  
P. Migliorato ◽  
K. Ohashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Frequency Dependence ◽  
La Doped

Epitaxial Growth and Anisotropic Dielectric Properties of La-Doped Bi4Ti3O12 Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 177-180
Author(s):  
Jang Sik Lee ◽  
Q.X. Jia
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
The Other ◽  
Field Range ◽  
Anisotropic Dielectric ◽  
Dielectric Nonlinearity ◽  
La Doped

To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (1MHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.

FREQUENCY DEPENDENCE OF THE DIELECTRIC PROPERTIES AND COERCIVE FIELD OF PbZr0.4Ti0.6O3 THIN FILMS

2006 ◽  
Vol 85 (1) ◽  
pp. 31-38 ◽  
Author(s):  
TIAN-ZHI LIU ◽  
ZHI-GANG ZHANG ◽  
DAN XIE ◽  
CHAO-GANG WEI ◽  
TIAN-LING REN ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Frequency Dependence ◽  
Coercive Field

STRUCTURE AND DIELECTRIC PROPERTIES OF La-DOPED LEAD STRONTIUM TITANATE THIN FILMS DERIVED FROM SOL–GEL METHOD

2008 ◽  
Vol 15 (01n02) ◽  
pp. 13-18
Author(s):  
X. T. LI ◽  
C. WU ◽  
W. J. WENG ◽  
G. R. HAN ◽  
P. Y. DU
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ito Glass ◽  
Gel Technique ◽  
La Doped

A series of ( Pb 0.4 Sr 0.6)1-x La 2x/3 TiO 3 (PSLT) thin films were deposited on ITO/glass substrates by sol–gel technique. Their phase status, surface morphology, and dielectric properties were studied by X-ray diffraction, scanning electron microscope, and impedance analyzer, respectively. Results show that the PSLT thin films were consisted of tetragonal perovskite phase PSLT thin films for x < 0.4, and cubic perovskite phase PSLT thin films for x > 0.4. Dielectric properties such as dielectric constants, dielectric tunabilitis, and inharmonic coefficient were characterized as a function of the film composition.

scholarly journals Modulation in Electric Conduction of PVK and Ferrocene-Doped PVK Thin Films

2022 ◽  
Vol 3 (1) ◽  
pp. 53-62
Author(s):  
Hari Chandra Nayak ◽  
Shivendra Singh Parmar ◽  
Rajendra Prasad Kumhar ◽  
Shailendra Rajput
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Frequency Dependence ◽  
Relative Permittivity ◽  
Frequency Dispersion ◽  
Frequency Region ◽  
Dielectric Parameter ◽  
High Frequency Region ◽  
Casting Technique ◽  
Tan Δ

In this article, the dielectric properties of poly (9-vinylcarbazole) (PVK) and ferrocene-doped PVK thin films are studied. The thin films were grown by the isothermal solution casting technique. Dielectric properties of grown films were studied as function of ferrocene concentration, frequency, and temperature. The relative permittivity (ε′) is increased with increasing ferrocene percentage (~1%) due to the free charge carriers. The relative permittivity decreases for higher ferrocene percentage (~2%). However, the relative permittivity of PVK and ferrocene-doped PVK samples remains almost constant for studied temperature range (313–413 K). The frequency dependence of tan δ for all samples is studied. The frequency dependence of dielectric parameter exhibits frequency dispersion behavior, which suggests all types of polarization present in the lower frequency range. The loss tangent (tanδ) values are larger at higher temperatures in the low frequency region. However, the tan δ values at different temperatures are almost similar in the high frequency region. It is observed that the relative permittivity is maximum, dielectric loss is minimum, and AC conductivity is minimum for 1% ferrocene doped PVK as compared to pure PVK and 2% ferrocene doped PVK samples.

IN-PLANE DIELECTRIC PROPERTIES OF BST THIN FILMS GROWN ON MgO SUBSTRATES USING THE THIN PEROVSKITE LAYERS FOR MICROWAVE TUNABLE ELECTRONICS

2006 ◽  
Vol 86 (1) ◽  
pp. 159-169 ◽  
Author(s):  
SU-JAE LEE ◽  
HAN-CHEOL RYU ◽  
YOUNG-TAE KIM ◽  
MIN-HWAN KWAK ◽  
SEUNGEON MOON ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Bst Thin Films
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