Optical and dielectric properties of (Zr0.8,Sn0.2)TiO4 thin films prepared by sol–gel process

2003 ◽  
Vol 99 (1-3) ◽  
pp. 382-385 ◽  
Author(s):  
W.X Cheng ◽  
A.L Ding ◽  
P.S Qiu ◽  
X.Y He ◽  
X.Sh Zheng
2011 ◽  
Vol 60 (2) ◽  
pp. 164-169 ◽  
Author(s):  
Chuanqing Li ◽  
Aiyun Liu ◽  
Junqiang Shi ◽  
Yafei Ruan ◽  
Lei Huang ◽  
...  

2010 ◽  
Vol 150-151 ◽  
pp. 112-117 ◽  
Author(s):  
Min Xian Shi ◽  
Wei Mao ◽  
Yan Qin ◽  
Zhi Xiong Huang ◽  
Dong Yun Guo

Pb(Zr0.53Ti0.47)O3 thin films with thickness of 120nm, 190nm, 310nm, 440nm and 630nm were deposited on Pt/Ti/SiO2/Si substrates by sol-gel process through repeating spining process 2 times, 4 times, 6 times, 8 times and 10 times respectively. The structures of PZT films were investigated by SEM and XRD analysis. The ferroelectric hysteresis loops were recorded by Radiant Precision Workstation and dielectric properties were measured using an Agilent HP4294A impedance analyzer. X-ray diffraction indicated that with the film thickness increasing, the diffraction intensity increased. The thickness of PZT film had great effect on ferroelectric and dielectric properties. Conclusively when the film thickness was about 310nm, the PZT thin films possessed better ferroelectric and dielectric properties.


2004 ◽  
Vol 87 (12) ◽  
pp. 2223-2227 ◽  
Author(s):  
Jiwei Zhai ◽  
Bo Shen ◽  
Xi Yao ◽  
Liangying Zhang ◽  
Haydn Chen

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