Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays

2021 ◽  
Author(s):  
Gabin Grégoire ◽  
Mohammed Zeghouane ◽  
Curtis Goosney ◽  
Nebile Isik Goktas ◽  
Philipp Staudinger ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Nanowire Arrays ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

scholarly journals Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

2020 ◽  
Vol 20 (4) ◽  
pp. 2232-2239 ◽  
Author(s):  
Mohammed Zeghouane ◽  
Geoffrey Avit ◽  
Yamina André ◽  
Thierry Taliercio ◽  
Pierre Ferret ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Morphological Control ◽  
Selective Area ◽  
Area Growth

scholarly journals Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten Mask

1999 ◽  
Vol 4 (S1) ◽  
pp. 441-446 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Shingo Nambu ◽  
Hiroki Sone ◽  
Masahito Yamaguchi ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Selective Area Growth ◽  
Crystal Axis ◽  
Lateral Overgrowth ◽  
Selective Area ◽  
Area Growth ◽  
Image Position

Selective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1 00> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overgrown layer. The surface of the ELO-GaN layer is quite uniform for both mask materials. In the case of MOVPE, the structures of ELO layers on the W mask are the same as those on the SiO2 mask for the <11 0> and <1 00> stripe patterns. No voids are observed between the W or SiO2 mask and the overgrown GaN layer by using MOVPE.

scholarly journals Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy

2020 ◽  
pp. 2000447
Author(s):  
Axel Strömberg ◽  
Prakhar Bhargava ◽  
Zhehan Xu ◽  
Sebastian Lourdudoss ◽  
Yan-Ting Sun
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Gaas On Si ◽  
Selective Area ◽  
Area Growth

Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask

1998 ◽  
Vol 537 ◽  
Author(s):  
Yasutoshi Kawaguchi ◽  
Shingo Nambu ◽  
Hiroki Sone ◽  
Masahito Yamaguchi ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Selective Area Growth ◽  
Crystal Axis ◽  
Lateral Overgrowth ◽  
Selective Area ◽  
Area Growth

AbstractSelective area growth (SAG) and epitaxial lateral overgrowth (ELO) of GaN using tungsten (W) mask by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE) have been studied. The selectivity of the GaN growth on the W mask as well as the SiO2 mask is excellent for both MOVPE and HVPE. The ELO-GaN layers are successfully obtained by HVPE on the stripe patterns along the <1100> crystal axis with the W mask as well as the SiO2 mask. There are no voids between the SiO2 mask and the overgrown GaN layer, while there are triangular voids between the W mask and the overgrown layer. The surface of the ELO-GaN layer is quite uniform for both mask materials. In the case of MOVPE, the structures of ELO layers on the W mask are the same as those on the SiO2 mask for the <1120> and <1100> stripe patterns. No voids are observed between the W or SiO2 mask and the overgrown GaN layer by using MOVPE.

Fabrication of selective-area growth InGaN LED by mixed-source hydride vapor-phase epitaxy

2017 ◽  
Vol 57 (1S) ◽  
pp. 01AD03 ◽  
Author(s):  
Sung Geun Bae ◽  
Injun Jeon ◽  
Hunsoo Jeon ◽  
Kyoung Hwa Kim ◽  
Min Yang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy

2016 ◽  
Vol 55 (5S) ◽  
pp. 05FF03 ◽  
Author(s):  
Kaddour Lekhal ◽  
Si-Young Bae ◽  
Ho-Jun Lee ◽  
Tadashi Mitsunari ◽  
Akira Tamura ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Selective growth of ordered hexagonal InN nanorods

CrystEngComm ◽  
2019 ◽  
Vol 21 (16) ◽  
pp. 2702-2708 ◽  
Author(s):  
Mohammed Zeghouane ◽  
Geoffrey Avit ◽  
Thomas W. Cornelius ◽  
Damien Salomon ◽  
Yamina André ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Hydride Vapor Phase Epitaxy ◽  
Selective Area Growth ◽  
Aspect Ratios ◽  
Selective Area ◽  
Area Growth ◽  
Vertically Aligned

Well-ordered and vertically aligned InN nanorods with high aspect ratios are synthesized by hydride vapor phase epitaxy (HVPE) using the selective area growth (SAG) approach.

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