scholarly journals Polishing, chemical etching and thermal treatment effects on surface and electrical properties of Er and Nd-doped GaSb substrates

2000 ◽  
Vol 71 (1-3) ◽  
pp. 282-287 ◽  
Author(s):  
J.L Plaza ◽  
P Hidalgo ◽  
B Méndez ◽  
J Piqueras ◽  
E Diéguez
Keyword(s):  
Electrical Properties ◽  
Thermal Treatment ◽  
Chemical Etching ◽  
Treatment Effects

scholarly journals Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films

2004 ◽  
Vol 7 (2) ◽  
pp. 363-367 ◽  
Author(s):  
Antonio Leondino Bacichetti Junior ◽  
Manuel Henrique Lente ◽  
Ricardo Gonçalves Mendes ◽  
Pedro Iris Paulin Filho ◽  
José Antonio Eiras
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Treatment ◽  
Pzt Thin Films ◽  
Structural And Electrical Properties

Synthesis, characterization and luminescence properties of Eu3+-doped hydroxyapatite nanocrystal and the thermal treatment effects

2015 ◽  
Vol 47 ◽  
pp. 135-142 ◽  
Author(s):  
Flávia R.O. Silva ◽  
Nelson B. de Lima ◽  
Ana Helena A. Bressiani ◽  
Lilia C. Courrol ◽  
Laércio Gomes
Keyword(s):  
Thermal Treatment ◽  
Treatment Effects ◽  
Luminescence Properties

Luminescence properties of Yb:Nd:Tm:KY3F10 nanophosphor and thermal treatment effects

2015 ◽  
Vol 157 ◽  
pp. 285-292 ◽  
Author(s):  
Laércio Gomes ◽  
Horácio Marconi da Silva M.D. Linhares ◽  
Rodrigo Uchida Ichikawa ◽  
Luis Gallego Martinez ◽  
Izilda Marcia Ranieri
Keyword(s):  
Thermal Treatment ◽  
Treatment Effects ◽  
Luminescence Properties

Enhanced electrical properties of lead-free BNLT–BZT ceramics by thermal treatment technique

2013 ◽  
Vol 39 ◽  
pp. S59-S63 ◽  
Author(s):  
Puripat Kantha ◽  
Nuttapon Pisitpipathsin ◽  
Kamonpan Pengpat
Keyword(s):  
Electrical Properties ◽  
Thermal Treatment ◽  
Lead Free ◽  
Treatment Technique

An integrated study of thermal treatment effects on the microstructure and magnetic properties of Zn–ferrite nanoparticles

2013 ◽  
Vol 25 (8) ◽  
pp. 086001 ◽  
Author(s):  
Bratislav Antic ◽  
Marija Perovic ◽  
Aleksandar Kremenovic ◽  
Jovan Blanusa ◽  
Vojislav Spasojevic ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Thermal Treatment ◽  
Treatment Effects ◽  
Ferrite Nanoparticles ◽  
Zn Ferrite ◽  
Integrated Study ◽  
Microstructure And Magnetic Properties

Effect of low thermal treatment temperatures on the morphological, optical and electrical properties of Sn1-xMnxTe nanocomposite films incorporated with indium cations

2019 ◽  
Vol 45 (17) ◽  
pp. 23203-23215 ◽  
Author(s):  
Nuengruethai Rukcharoen ◽  
Auttasit Tubtimtae ◽  
Veeramol Vailikhit ◽  
Pichanan Teesetsopon ◽  
Nareerat Kitisripanya
Keyword(s):  
Electrical Properties ◽  
Thermal Treatment ◽  
Nanocomposite Films ◽  
Optical And Electrical Properties

The Effect of Rapid Thermal Treatment on the Structural and Optoelectronic Properties of Epitaxial Gaas on Si Grown With or Without Ge Intermediate Layers

1987 ◽  
Vol 92 ◽  
Author(s):  
El-Hang Lee ◽  
M.Abdul Awal ◽  
E. Y. Chan ◽  
R. L. Opila ◽  
D. C. Jacobson ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Thermal Treatment ◽  
Intermediate Layer ◽  
Optoelectronic Properties ◽  
Gaas On Si ◽  
Intermediate Layers ◽  
Structural And Electrical Properties ◽  
Before And After ◽  
Structural And Optoelectronic Properties ◽  
Raman Characterization

ABSTRACTCharacteristics of MOCVD GaAs grown on Si are compared before and after a rapid thermal treatment. The GaAs-on-Si samples were prepared both with and without a Ge intermediate layer, which is used to accomodate mismatches of lattice, thermal and chemical origin between GaAs and Si. Structural, interfacial, chemical, and electrical changes have been examined. RBS and Raman characterization showed improvement of GaAs crystallinity after RTA. In most cases, the interfaces were found to become sharper after RTA, but chemical interdiffusion was observed to cause some effect on the structural and electrical properties. For gold-contacted GaAs, RTA seems to degrade the electrical and optoelectronic properties via gold interdiffusion into GaAs. Comparative studies of the GaAs/Si and GaAs/Ge/Si samples suggests that the two respond somewhat differently to RTA.

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