The Effect of Rapid Thermal Treatment on the Structural and Optoelectronic Properties of Epitaxial Gaas on Si Grown With or Without Ge Intermediate Layers

ABSTRACTCharacteristics of MOCVD GaAs grown on Si are compared before and after a rapid thermal treatment. The GaAs-on-Si samples were prepared both with and without a Ge intermediate layer, which is used to accomodate mismatches of lattice, thermal and chemical origin between GaAs and Si. Structural, interfacial, chemical, and electrical changes have been examined. RBS and Raman characterization showed improvement of GaAs crystallinity after RTA. In most cases, the interfaces were found to become sharper after RTA, but chemical interdiffusion was observed to cause some effect on the structural and electrical properties. For gold-contacted GaAs, RTA seems to degrade the electrical and optoelectronic properties via gold interdiffusion into GaAs. Comparative studies of the GaAs/Si and GaAs/Ge/Si samples suggests that the two respond somewhat differently to RTA.

Download Full-text

Influence of the crystallization thermal treatment on the structural and electrical properties of PZT thin films

Materials Research ◽

10.1590/s1516-14392004000200025 ◽

2004 ◽

Vol 7 (2) ◽

pp. 363-367 ◽

Cited By ~ 2

Author(s):

Antonio Leondino Bacichetti Junior ◽

Manuel Henrique Lente ◽

Ricardo Gonçalves Mendes ◽

Pedro Iris Paulin Filho ◽

José Antonio Eiras

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Thermal Treatment ◽

Pzt Thin Films ◽

Structural And Electrical Properties

Download Full-text

Effects of thermal treatment on structural and electrical properties of sputtered Ir–W alloy thin films

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2004.10.037 ◽

2005 ◽

Vol 198 (1-3) ◽

pp. 148-151 ◽

Cited By ~ 4

Author(s):

Yoshio Abe ◽

Eiji Watanabe ◽

Katsutaka Sasaki ◽

Shigemi Iura

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Thermal Treatment ◽

Structural And Electrical Properties

Download Full-text

The optoelectronic properties and role of Cu concentration on the structural and electrical properties of Cu doped ZnO nanoparticles

Physica B Condensed Matter ◽

10.1016/j.physb.2018.02.025 ◽

2018 ◽

Vol 537 ◽

pp. 167-175 ◽

Cited By ~ 59

Author(s):

K. Omri ◽

A. Bettaibi ◽

K. Khirouni ◽

L. El Mir

Keyword(s):

Electrical Properties ◽

Zno Nanoparticles ◽

Optoelectronic Properties ◽

Structural And Electrical Properties ◽

Doped Zno

Download Full-text

The Influence of Thermal Treatment on Monocrystalline CZT and Tellurium Inclusions

MRS Proceedings ◽

10.1557/opl.2015.448 ◽

2015 ◽

Vol 1792 ◽

Author(s):

Jonathan Lassiter ◽

Charles Payton ◽

Maxx Jackson ◽

Samuel Uba ◽

Claudiu Muntele ◽

...

Keyword(s):

Electrical Properties ◽

Thermal Treatment ◽

Structural Changes ◽

Radiation Detector ◽

Radiation Detectors ◽

Thermal Treatments ◽

Annealing Conditions ◽

Optimal Annealing Temperature ◽

Before And After ◽

Temperature Radiation

ABSTRACTCadmium Zinc Telluride (CZT), considered as a viable material for use in room temperature radiation detectors, has an undesired presence of tellurium inclusions in the bulk. Thermal treatment, in the form of annealing, has been utilized to test the viability of refining CZT into better detector material, either by the elimination of the tellurium inclusions or by the migration of the inclusions under a temperature gradient, but usually with a deterioration of electrical properties. We took infrared micrographs and current voltage (IV) characteristics of CZT samples prior to thermal treatment. We carried out 24-hour thermal treatments with a range of temperature from 100°C to 700°C to determine an optimal annealing temperature and to verify changes in the sizes, morphologies, and locations of the tellurium inclusions on the surfaces and within the crystal bulk of the CZT. The IV curves and resistivities prior to and after thermal treatments were compared, as were the infrared micrographs before and after annealing. Also, the changes in electrical properties of the samples with annealing conditions were compared against structural changes monitored at the same steps during the annealing process, in order to understand the effects of the thermal annealing to the radiation detector properties of the material. Correlations between the shape, size and position of inclusions and electrical properties of the material were attempted.

Download Full-text

Structural and Electrical Properties of Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si

MRS Proceedings ◽

10.1557/proc-161-351 ◽

1989 ◽

Vol 161 ◽

Cited By ~ 4

Author(s):

S.M. Johnson ◽

W.L. Ahlgren ◽

M. H. Kalisher ◽

J. B. James ◽

W. J. Hamilton

Keyword(s):

Electrical Properties ◽

Hall Effect ◽

Lattice Mismatch ◽

Biaxial Tension ◽

Gaas Layer ◽

X Ray ◽

Si Substrates ◽

Structural And Electrical Properties ◽

Before And After ◽

Hall Effect Measurements

ABSTRACTThe structural and electrical properties of heteroepitaxial HgCdTe/CdZnTe/GaAs/Si were evaluated using high-resolution x-ray diffraction techniques and Hall-effect measurements as a function of temperature. Significant tilting of the layers was found for both {100} and {111} CdZnTe layers grown on misoriented {100}GaAs/Si substrates, consistent with the interpretation of a low-angle tilt boundary being formed at the interface to relieve the large lattice mismatch between the layers. The GaAs layer is in a state of biaxial tension before and after the growth of the CdZnTe layers. The x-ray FWHM of HgCdTe layers grown by LPE on these substrates was found to be reduced from that of the MOCVD-grown CdZnTe buffer layer due to both an annealing effect during LPE growth and to the increased distance of layer surface from the defective CdZnTe/GaAs interface. Hall-effect mobility for {100}HgCdTe layers was nearly identical to that of layers grown on bulk CdZnTe substrates. High-quality heterojunction infrared detectors have been fabricated using these materials.

Download Full-text

Structural and Electrical Properties of Thermally Evaporated SnxSe1-x Thin Films

Indian Journal Of Applied Research ◽

10.15373/2249555x/oct2013/132 ◽

2011 ◽

Vol 3 (10) ◽

pp. 1-4 ◽

Cited By ~ 1

Author(s):

Bushra A Hasan ◽

◽

Ghuson H Mohamed ◽

Amer A Ramadhan

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Structural And Electrical Properties

Download Full-text

Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

Ibn AL- Haitham Journal For Pure and Applied Science ◽

10.30526/2017.ihsciconf.1789 ◽

2018 ◽

pp. 168

Author(s):

A. Kareem Dahash Ali ◽

Nihad Ali Shafeek

Keyword(s):

Transition Temperature ◽

Solid State ◽

Hydrostatic Pressure ◽

Electrical Properties ◽

Co2 Laser ◽

Temperature Shift ◽

Unit Cell ◽

X Ray Diffraction ◽

X Ray ◽

Structural And Electrical Properties

This study included the fabrication of compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values of x, the best ratio of compensation is 0.2 which showed an increase in the values of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K.

Download Full-text