High impedance latest generation ventricular leads: Comparison between two steroid and one non -steroid eluting lead with ultrasmall pacing surface

EP Europace ◽  
2001 ◽  
Vol 2 ◽  
pp. A26-A26
Keyword(s):  
High Impedance

Investigation of High Frequency Failures on a 0.35μm CMOS IC

1999 ◽  
Author(s):  
Alan Kennen ◽  
John F. Guravage ◽  
Lauren Foster ◽  
John Kornblum
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Integrated Circuit ◽  
Metal Layer ◽  
Ion Beam ◽  
Stress Test ◽  
Design For Test ◽  
Interface Failure ◽  
Serial Interface ◽  
High Impedance

Abstract Rapidly changing technology highlights the necessity of developing new failure analysis methodologies. This paper will discuss the combination of two techniques, Design for Test (DFT) and Focused Ion Beam (FIB) analysis, as a means for successfully isolating and identifying a series of high impedance failure sites in a 0.35 μm CMOS design. Although DFT was designed for production testing, the failure mechanism discussed in this paper may not have been isolated without this technique. The device of interest is a mixed signal integrated circuit that provides a digital up-convert function and quadrature modulation. The majority of the circuit functions are digital and as such the majority of the die area is digital. For this analysis, Built In Self Test (BIST) circuitry, an evaluation board for bench testing and FIB techniques were used to successfully identify an unusual failure mechanism. Samples were subjected to Highly Accelerated Stress Test (HAST) as part of the device qualification effort. Post-HAST electrical testing at 200MHz indicated that two units were non-functional. Several different functional blocks on the chip failed electrical testing. One part of the circuitry that failed was the serial interface. The failure analysis team decided to look at the serial interface failure mode first because of the simplicity of the test. After thorough analysis the FA team discovered increasing the data setup time at the serial port input allowed the device to work properly. SEM and FIB techniques were performed which identified a high impedance connection between a metal layer and the underlying via layer. The circuit was modified using a FIB edit, after which all vectors were read back correctly, without the additional set-up time.

Novel Electrically Small Antennas and Metamaterial High Impedance Surfaces

2005 ◽  
Author(s):  
Ahmad Hoorfar ◽  
John McVay ◽  
Jinhui Zhu ◽  
Hui Huang
Keyword(s):  
Electrically Small Antennas ◽  
Small Antennas ◽  
High Impedance

scholarly journals Thermal burns in electroconvulsive therapy

2021 ◽  
pp. 201010582110310
Author(s):  
Ernest Weisheng Ho ◽  
Eng Leonard ◽  
Lee Tih-Shih ◽  
Gregory James Meredith
Keyword(s):  
Case Report ◽  
Mood Disorders ◽  
Electroconvulsive Therapy ◽  
Ignition Source ◽  
Thermal Burns ◽  
High Impedance ◽  
Temporal Placement ◽  
Close Proximity ◽  
Life Threatening

Electroconvulsive therapy (ECT) is effective for mood disorders and schizophrenia. Thermal burns, while rare, are potentially sight and life threatening. The three elements necessary for a fire are often in close proximity during a session: an oxidiser (oxygen), an ignition source (faulty electrodes, poor contact with skin producing a spark) and fuel (hair, residual alcohol cleanser). This case report describes one such incident when a patient sustained a burn during ECT, with poor contact of electrode pad with skin, high impedance and an oxygen-rich environment possibly contributing. Given that ECT is conducted relatively frequently (once every 2–3 days) in a usual regimen, we make recommendations for safe application of electrode pads for temporal placement ECT.

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