Correlation between interfacial segregation and surface-energy-induced selective grain growth in 3% silicon–iron alloy

2000 ◽  
Vol 48 (11) ◽  
pp. 2901-2910 ◽  
Author(s):  
N.H Heo ◽  
K.H Chai ◽  
J.G Na
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Iron Alloy ◽  
Silicon Iron ◽  
Interfacial Segregation

Effects of Surface-Segregated Sulfur on Primary Texture and Surface-Energy-Induced Selective Grain Growth in Ultra-Thin 3% Silicon-Iron Alloy

2002 ◽  
Vol 408-412 ◽  
pp. 1299-1304
Author(s):  
S.S. Cho ◽  
Sang Bae Kim ◽  
Y.S. Choi ◽  
K.H. Chai ◽  
Jae Min Oh ◽  
...  
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Iron Alloy ◽  
Silicon Iron

scholarly journals Surface Energy Controlled Abnormal Grain Growth in Melt-quenched 6.6% Silicon Iron Ribbons

1988 ◽  
Vol 74 (6) ◽  
pp. 1044-1051
Author(s):  
Toshiro TOMIDA ◽  
Atsuki OKAMOTO ◽  
Masashi TAKAHASHI
Keyword(s):  
Surface Energy ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
Silicon Iron

EFFECT OF ADDITION OF THIRD ELEMENT IN HIGH SILICON-IRON ALLOY

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-133-C8-134
Author(s):  
H. Nakamura ◽  
N. Tsuya ◽  
Y. Saito ◽  
Y. Katsumata ◽  
Y. Harada
Keyword(s):  
Iron Alloy ◽  
Silicon Iron ◽  
High Silicon

MAGNESIL-N

Alloy Digest ◽  
1975 ◽  
Vol 24 (7) ◽  
Keyword(s):  
Shear Strength ◽  
Physical Properties ◽  
Tensile Properties ◽  
Iron Alloy ◽  
Heat Treating ◽  
Rolling Plane ◽  
Silicon Iron

Abstract MAGNESIL-N is a non-oriented silicon-iron alloy of exceptional magnetic qualities designed for applications involving frequencies of 400 Hertz and higher. It has good permeability in all directions of the rolling plane, and is designed for either punched or sheared laminations with random flux disposition. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and shear strength. It also includes information on forming and heat treating. Filing Code: Fe-53. Producer or source: Spang Industries Inc..

Effect of oxygen on the surface energy of planes (110) and (100) in silicon iron

1969 ◽  
Vol 11 (2) ◽  
pp. 88-89
Author(s):  
Yu. S. Avraamov ◽  
V. M. Semenov ◽  
I. Ya. Levin ◽  
Yu. V. Neklyudov
Keyword(s):  
Surface Energy ◽  
Silicon Iron ◽  
Effect Of Oxygen

Effects of Surface Energy on the Microstructures of Thin Sb Films

1990 ◽  
Vol 202 ◽  
Author(s):  
L. H. Chou ◽  
M. C. Kuo
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Grain Growth ◽  
Grain Orientation ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Transmission Electron ◽  
Diffraction Peaks

ABSTRACTThin Sb films have been prepared on glass substrates by rapid thermal evaporation. Films with thicknesses varied from 260 Å to 1300Å were used for the study. X-ray diffraction data showed that for films deposited at room substrate temperature, an almost random grain orientation was observed for films of 1300 Å thick and a tendency for preferred grain orientation was observed as films got thinner. For films of 260 Å thick, only two x-ray diffraction peaks--(003) and (006) were observed. After thermal annealing, secondary grains grew to show preferred orientation in all the films. This phenomenon was explained by surface-energy-driven secondary grain growth. This paper reports the effects of annealing time and film thickness on the secondary grain growth and the evolution of thin Sb film microstmctures. Transmission electron microscopy (TEM) and x-ray diffraction were used to characterize the films.

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