Rapid thermal oxidation of highly in situ phosphorus doped polysilicon thin films

1998 ◽  
Vol 1 (3-4) ◽  
pp. 275-279 ◽  
Author(s):  
S Kallel ◽  
B Semmache ◽  
M Lemiti ◽  
A Laugier
2018 ◽  
Vol 33 (8) ◽  
pp. 085001
Author(s):  
Atzin David Ruíz Pérez ◽  
M B de la Mora ◽  
J L Benítez ◽  
R Castañeda-Guzmán ◽  
Jorge Alejandro Reyes-Esqueda ◽  
...  

2017 ◽  
Vol 121 (24) ◽  
pp. 245308 ◽  
Author(s):  
Fabien Rozé ◽  
Olivier Gourhant ◽  
Elisabeth Blanquet ◽  
François Bertin ◽  
Marc Juhel ◽  
...  

2013 ◽  
Vol 63 (9) ◽  
pp. 1794-1798 ◽  
Author(s):  
Sung-Jae Joo ◽  
Je Hoon Choi ◽  
Seong Jeen Kim ◽  
Sang-Cheol Kim

1987 ◽  
Vol 106 ◽  
Author(s):  
R. Sinclair ◽  
A. H. Carim ◽  
J. Morgiel ◽  
J. C. Bravman

ABSTRACTSome typical microstructural studies of polycrystalline silicon using transmission electron microscopy (TEM) are described, including the application of this material for assisting TEM investigations themselves. Examples include oxidation and realignment of polysilicon thin films, the structure of polysilicon in EEPROM devices, polysilicon in trench capacitors and measurement of SiO2 layer thicknesses with polysilicon overlayers. It is also shown tha grain growth in heavily phosphorus doped polysilicon films can be followed by in situ heating in the TEM.


1998 ◽  
Vol 1 (3-4) ◽  
pp. 299-302 ◽  
Author(s):  
S Kallel ◽  
B Semmache ◽  
M Lemiti ◽  
Ch Dubois ◽  
H Jaffrezic ◽  
...  

2020 ◽  
Vol 70 (11) ◽  
pp. 914-919
Author(s):  
Miyeon CHEON ◽  
Yousil LEE ◽  
Sujae KIM ◽  
Se Young jeong*

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