Study of the Role of Void and Residual Silicon Dioxide on the Electrochemical Performance of Silicon Nanoparticles Encapsulated by Graphene

Silicon nanoparticles are used to enhance the anode specific capacity for the lithium-ion cell technology. Due to the mechanical deficiencies of silicon during lithiation and delithiation, one of the many strategies that have been proposed consists of enwrapping the silicon nanoparticles with graphene and creating a void area between them so as to accommodate the large volume changes that occur in the silicon nanoparticle. This work aims to investigate the electrochemical performance and the associated kinetics of the hollow outer shell nanoparticles. To this end, we prepared hollow outer shell silicon nanoparticles (nps) enwrapped with graphene by using thermally grown silicon dioxide as a sacrificial layer, ball milling to enwrap silicon particles with graphene and hydro fluorine (HF) to etch the sacrificial SiO2 layer. In addition, in order to offer a wider vision on the electrochemical behavior of the hollow outer shell Si nps, we also prepared all the possible in-between process stages of nps and corresponding electrodes (i.e., bare Si nps, bare Si nps enwrapped with graphene, Si/SiO2 nps and Si/SiO2 nps enwrapped with graphene). The morphology of all particles revealed the existence of graphene encapsulation, void, and a residual layer of silicon dioxide depending on the process of each nanoparticle. Corresponding electrodes were prepared and studied in half cell configurations by means of galvanostatic cycling, cyclic voltammetry and electrochemical impedance spectroscopy. It was observed that nanoparticles encapsulated with graphene demonstrated high specific capacity but limited cycle life. In contrast, nanoparticles with void and/or SiO2 were able to deliver improved cycle life. It is suggested that the existence of the void and/or residual SiO2 layer limits the formation of rich LiXSi alloys in the core silicon nanoparticle, providing higher mechanical stability during the lithiation and delithiation processes.

Influence of Silicon Nanoparticle on the Electrical Properties of Heterostructured CdTe/CdS thin films based Photovoltaic Device

This paper presents the influence of silicon nanoparticles at the interface of heterostructured Cadmium telluride and cadmium sulfide thin films based photovoltaic device with improved electrical parameters leading to tremendous improvement in CdS/CdTe thin f ilm based solar cells performance. The films of CdTe, CdS and Si were electrodeposited using electrodeposition technique to form a heterostructured CdTe/Si/CdS/FTO. The films respective structural properties were also examined using X-ray Diffractometer (XRD) before forming a heterostructured material. The heterostructured CdTe/Si/CdS/FTO and the structure without the inclusion of silicon nanoparticle were examined using electrometer for the extraction of electrical parameters such open circuit voltage (VOC), short circuit current density (JSC), and fill factor (FF). Although a large body of experimental results are available to date on the optoelectronics properties of the materials. However, there is relatively low research studies or works on the electrical properties of the materials. Therefore, we formed heterostructured based photovoltaic device and characterized the structure to determine useful electrical properties. The value obtained for VOC, JSC and FF are 418 mV, 25 mA/cm2 and 0.72 which are indicative of pin holes free semiconductor materials and no leakage path emerging from high-grade materials used in the deposition of heterostructured CdTe/Si/CdS.