Studies of the g factors and zero-field splitting for the trigonal Ti2+GaSp defect center in GaP crystal

2003 ◽  
Vol 59 (4) ◽  
pp. 751-754
Author(s):  
Zheng Wen-Chen ◽  
Wu Shao-Yi ◽  
Zi Jian
Keyword(s):  
Zero Field ◽  
Zero Field Splitting ◽  
Defect Center ◽  
Field Splitting ◽  
G Factors

EPR Study of the Nitrogen Containing Defect Center Created in Self-Assembled 6H SiC Nanostructure

2013 ◽  
Vol 740-742 ◽  
pp. 389-392 ◽  
Author(s):  
Ekaterina N. Kalabukhova ◽  
Dariya Savchenko ◽  
Bela Shanina ◽  
Nikolai T. Bagraev ◽  
Leonid Klyachkin ◽  
...  
Keyword(s):  
The Self ◽  
Zero Field ◽  
Boron Diffusion ◽  
Spin Hamiltonian ◽  
Zero Field Splitting ◽  
Epr Spectrum ◽  
Defect Center ◽  
Field Splitting ◽  
Splitting Constant ◽  
Self Assembled

Triplet center with spin state S = 1 is detected in the EPR spectrum of the self-assembled 6H SiC nanostructure obtained by non-equilibrium boron diffusion into the n-type 6H SiC epitaxial layer (EL) under conditions of the controlled injection of the silicon vacancies at the temperature of T = 900°C. From the analysis of the angular dependences of the EPR spectrum and the numerical diagonalization of the spin Hamiltonian, the value of the zero-field splitting constant D and g-factor are found to be D = 1140•10-4см-1 and gpar = 1.9700, gper = 1.9964. Based on the hyperfine (hf) structure of the defect originating from the hf interaction with one 14N nuclei, the large value of the zero-field splitting constant D and technological conditions of the boron diffusion into the n-type 6H SiC EL, the triplet center is tentatively assigned to the defect center consisting of nitrogen atom and silicon vacancy.

Fine Structure of Triplet Centers in Room Temperature Irradiated 6H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 403-406 ◽  
Author(s):  
Andreas Scholle ◽  
Siegmund Greulich-Weber ◽  
Eva Rauls ◽  
Wolf Gero Schmidt ◽  
Uwe Gerstmann
Keyword(s):  
Fine Structure ◽  
Room Temperature ◽  
Positive Sign ◽  
Spin Interaction ◽  
Zero Field ◽  
Spin Orbit ◽  
Zero Field Splitting ◽  
Defect Center ◽  
Field Splitting ◽  
Annealing Behavior

In non-annealed 6H-SiC samples that were electron irradiated at room temperature, a new EPR signal due to a S=1 defect center with exceptionally large zero-field splitting (D = +652•10-4 cm-1) has been observed under illumination. A positive sign of D demonstrates that the spin-orbit contribution to the zero-field splitting exceeds by far that of the spin-spin interaction. A principal axis of the fine structure tilted by 59° against the crystal c-axis as well as the exceptionally high zero-field splitting D can be qualitatively understood by the occurrence of additional close-lying defect levels in defect clusters resulting in comparatively large second-order spin-orbit coup¬ling. A tentative assignment to vacancy clusters is supported by the observed annealing behavior.

Correlating the axial Zero Field Splitting with the slow magnetic relaxation in GdIII SIMs

2021 ◽  
Author(s):  
Júlia Mayans ◽  
Albert Escuer
Keyword(s):  
Magnetic Relaxation ◽  
Zero Field ◽  
Zero Field Splitting ◽  
Field Splitting ◽  
Slow Magnetic Relaxation

A possible relation between the value of the axial Zero Field Splitting and the occurrence of field-induced slow magnetic relaxation has been established for a new gadolinium(iii) compound.

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