Removal of Ag remanence and improvement in structural attributes of silicon nanowires array via sintering

Metal-assisted chemical etching (MACE) is popular due to the large-area fabrication of silicon nanowires (SiNWs) exhibiting a high aspect ratio at a low cost. The remanence of metal, i.e., silver nanoparticles (AgNPs) used in the MACE, deteriorates the device (especially solar cell) performance by acting as a defect center. The superhydrophobic behavior of nanowires (NWs) array prohibits any liquid-based solution (i.e., thorough cleaning with HNO3 solution) from removing the AgNPs. Thermal treatment of NWs is an alternative approach to reduce the Ag remanence. Sintering temperature variation is chosen between the melting temperature of bulk-Ag (962 °C) and bulk-Si (1412 °C) to reduce the Ag particles and improve the crystallinity of the NWs. The melting point of NWs decreases due to surface melting that restricts the sintering temperature to 1200 °C. The minimum sintering temperature is set to 1000 °C to eradicate the Ag remanence. The SEM–EDS analysis is carried out to quantify the reduction in Ag remanence in the sintered NWs array. The XRD analysis is performed to study the oxides (SiO and Ag2O) formed in the NWs array due to the trace oxygen level in the furnace. The TG-DSC characterization is carried out to know the critical sintering temperature at which remanence of AgNPs removes without forming any oxides. The Raman analysis is studied to determine the crystallinity, strain, and size of Si nanocrystals (SiNCs) formed on the NWs surface due to sidewalls etching. An optimized polynomial equation is derived to find the SiNCs size for various sintering temperatures.

Research on the Distribution Rule of Percussion Response Pulse Width in Coin-Tap Test

The coin-tap method performs nondestructive testing by measuring the width of the tapping response pulse on the surface of the material. Existing studies have shown that defects in the material will cause the width of the tapping response pulse to increase. However, experiments have confirmed that different detection positions in the defective area will show different values of the width of the tapping response pulse, and the physical laws behind it have not been studied yet. To discuss its physical meaning, a mathematical model of the defective area is established, a method for calculating the width of the tapping response pulse is proposed, and a composite honeycomb structure with preset defects is used for data testing. Both the test results and the calculation results show that the pulse width of the tapping response will decrease with the increase of the defect depth and the deviation of the tapping position from the defect center. The consistency between the calculated results and the experimental results shows that the established defect model and pulse width calculation method can better explain the distribution law of the pulse width of the tapping response in the defective area.

Assessment of the local mechano-electrochemical effect on pipeline defects by 2D and 3D finite element models

Local corrosion at a defect on a pipeline was assessed using both 2-dimensional (2D) and 3D finite element (FE) models under mechano-electrochemical (M-E) interaction. While the M-E interaction increases corrosion activity at the defect, the assessment of M-E interaction would have different results using 2D and 3D models. Compared with the 3D model, the 2D model produces a greater local stress, a higher local plastic strain, a more negative corrosion potential and a higher anodic current density at the defect, and thus, a lower threshold internal pressure causing local yielding. The 3D model is more conservative for corrosion rate prediction of corroded pipelines. A new concept, rAZ (the ratio of the anodic zone length to defect length in the 2D model, or the ratio of the anodic zone area to the defect area in the 3D model), is proposed to define growth mode of the corrosion defect. There is a smaller rAZ produced in 2D model. At specific internal pressures, the 2D model predicts an ellipsoidal defect center area experiencing accelerated corrosion and potentially resulting in pipeline leaking.

Single Photon Randomness based on a Defect Center in Diamond

The prototype of a quantum random number generator is a single photon which impinges onto a beam splitter and is then detected by single photon detectors at one of the two output paths. Prior to detection, the photon is in a quantum mechanical superposition state of the two possible outcomes with –ideally– equal amplitudes until its position is determined by measurement. When the two output modes are observed by a single photon detector, the generated clicks can be interpreted as ones and zeros – and a raw random bit stream is obtained. Here we implement such a random bit generator based on single photons from a defect center in diamond. We investigate the single photon emission of the defect center by an anti-bunching measurement. This certifies the “quantumness” of the supplied photonic input state, while the random “decision” is still based on the vacuum fluctuations at the open port of the beam-splitter. Technical limitations, such as intensity fluctuations, mechanical drift, and bias are discussed. A number of ways to suppress such unwanted effects, and an a priori entropy estimation are presented. The single photon nature allows for a characterization of the non-classicality of the source, and allows to determine a background fraction. Due to the NV-center’s superior stability and optical properties, we can operate the generator under ambient conditions around the clock. We present a true 24/7 operation of the implemented random bit generator.

On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements

Aluminum implanted 4H-SiC often shows an unexpected increase of the free hole density at elevated temperatures in Hall Effect measurements. Here we show that this phenomenon cannot solely be traced down to the Hall scattering factor and the presence of excited acceptor states. It is necessary to assume an additional defect center in the lower half of the band gap with ionization energies higher than that of aluminum to explain this behavior. Therefore, we investigated ion-implanted square van-der-Pauw samples with Hall Effect and complementary SIMS measurements. An analysis of the data using the neutrality equation reveals compensation ratios of 20 % to 90 %, depending on the aluminum concentration and the concentration of the deep defect center of up to 50 % of the doping.

Impact of Gentamicin-Loaded Bone Graft on Defect Healing in a Sheep Model

Infections of bone are severe complications, and an optimization of grafting material with antimicrobial drugs might be useful for prevention and treatment. This study aimed to investigate the influence of gentamicin-loaded bone graft on the healing of bone defects in a sheep model. Metaphyseal and diaphyseal drill hole defects (diameter: 6 mm, depth: 15 mm) were filled with graft or gentamicin-loaded graft (50 mg/g graft) or were left untreated. Analysis of regeneration after three and nine weeks, micro-computed tomography (μCT), and histology revealed a significant increase in bone formation in the drill hole defects, which began at the edges of the holes and grew over time into the defect center. The amount of graft decreased over time due to active resorption by osteoclasts, while osteoblasts formed new bone. No difference between the groups was seen after three weeks. After nine weeks, significantly less mineralized tissue was formed in the gentamicin-loaded graft group. Signs of inflammatory reactions were seen in all three groups. Even though the applied gentamicin concentration was based on the concentration of gentamicin mixed with cement, the healing process was impaired. When using local gentamicin, a dose-dependent, compromising effect on bone healing should be considered.

Effect of Vertical or Beveled Chondral Defect Creation on Rim Deformation and Contact

Objective To determine biomechanical effects of knee cartilage defect perimeter morphology based on cartilage strain and opposing subchondral bone contact. Design Articular cartilage defects were created in 5 bovine femoral condyles: group 1, 45° inner bevel with 8-mm rim; group 2, vertical with 8-mm rim; and group 3, 45° outer bevel with 8-mm base. Samples were placed into a custom-machined micro–computed tomography tube and subjected to 800 N of axial loading. DICOM data were used to calculate cartilage thickness 4 and 6 mm from the center, distance between tibial cartilage surface and femoral subchondral bone, and contact width between tibial cartilage and subchondral bone. Strain 4 mm from the center and both absolute and change in distance (mm) to subchondral bone were compared between groups 1 and 2 using paired t tests. Strain at 6 mm and distance changed, loaded distance, and contact width (mm) were compared between groups using the Friedman test with post hoc analysis using Wilcoxon signed rank test. Results No significant differences in rim strain were noted between groups 1 and 2 at 4 mm ( P = 0.10) and between groups 1, 2, and 3 at 6 mm ( P = 0.247) from the defect center. The loaded distance was significantly different between groups 1 and 3 ( P = 0.013). No significant change in distance to the subchondral bone was found between groups ( P = 0.156). The difference in subchondral bone contact area approached but did not reach significance ( P = 0.074). Conclusion When debriding focal articular cartilage defects, establishment of an inner bevel decreases tissue deformation and contact with opposing subchondral bone.