Capture and transit-time electron effects in high-frequency operation of multiple quantum well infrared photodetectors

1998 ◽  
Vol 2 (1-4) ◽  
pp. 142-145 ◽  
Author(s):  
V Ryzhii ◽  
I Khmyrova ◽  
M Ryzhii
Keyword(s):  
Quantum Well ◽  
Transit Time ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Infrared Photodetectors ◽  
Multiple Quantum ◽  
Quantum Well Infrared Photodetectors ◽  
High Frequency Operation ◽  
Electron Effects

High-Temperature High-Frequency Operation of Single and Multiple Quantum Well InGaAs Semiconductor Lasers

2000 ◽  
Author(s):  
William J. Siskaninetz ◽  
Hank D. Jackson ◽  
James E. Ehret ◽  
Jeffrey C. Wiemeri ◽  
John P. Loehr
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Semiconductor Lasers ◽  
High Frequency ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Frequency Operation

Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates

1998 ◽  
Author(s):  
Deepak K. Sengupta ◽  
Sarath D. Gunapala ◽  
Thomas George ◽  
Sumith V. Bandara ◽  
C.-N. Chang-Chien ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Infrared Photodetectors ◽  
Multiple Quantum ◽  
Si Substrates ◽  
Quantum Well Infrared Photodetectors ◽  
Gaas On Si
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