A Comparison of Scanning and Fixed Beam High Voltage Electron Microscopy
Since the theoretical advantage of high voltage microscopy in terms of improved resolution has not yet been achieved, the justification for the building of high voltage microscopes has been mainly the possibility of studying thicker specimens plus the observation of some radiation damage and some relativistic n-beam dynamical diffraction effects. For most of these purposes the scanning mode of transmission electron microscopy has clear advantages.As in the case of the fixed beam instrument (FBI), the limitation on resolution of the scanning transmission electron microscope (STEM) for ideal thin specimens is determined largely by instabilities of the high voltage supply and lens currents and by mechanical instabilities. In this respect the STEM suffers from the disadvantage that the point-by-point recording of the image involves a greater recording time and hence greater sensitivity to long term instabilities.