Recent trends in high-resolution electron microscopy

Author(s):  
David J. Smith

The recent advent of high-resolution electron microscopes (HREMs) capable of resolving sub-2-Ångstrom detail on a routine basis has led to an enormous increase in the range of materials which can be usefully studied. Not only is it possible to resolve individual atomic columns in low index zones of most common metals but observations of semiconductors, for example, are no longer restricted to the traditional [110] zone, thereby making it feasible at last to obtain two-dimensional information about surfaces, interfaces and other planar defects. There is a worldwide upsurge of interest in the capabilities of these machines and the so-called medium-voltage (300-400kV) HREMs are selling rapidly despite their considerable expense. Our objective here is to provide a brief and selective overview of the latest applications and likely trends in HREM studies of materials - further details can be found elsewhere in these proceedings. No attempt is made to review instrumentation developments since they are being considered separately.

Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.


Author(s):  
M. R. McCartney ◽  
David J. Smith

The examination of surfaces requires not only that they be free of adsorbed layers but the environment of the sample must also be maintained at high vacuum so that the surfaces remain clean. The possibility of resolving surface structures with atomic resolution has provided the motivation for optimizing intermediate and high voltage electron microscopes for this particular application. Electron microscopy offers a variety of techniques which have the capability of achieving atomic level detail of surfaces including plan-view imaging, REM and profile imaging. Operation at higher voltages permits reasonable pole piece dimensions thereby providing space for in situ studies yet still compatible with high resolution. Moreover, video systems can be attached which permit observation and recording of dynamic phenomena without compromising microscope performance.


1996 ◽  
Vol 11 (8) ◽  
pp. 1891-1896 ◽  
Author(s):  
X. Z. Li ◽  
K. Hiraga

A two-dimensional quasicrystal with fivefold symmetry and two large-unit-cell crystalline approximants in an Al–Co–Ni–Tb alloy, which were observed in previous studies, are suggested to be composed of the same kind of atom cluster. Some characteristics of the atom cluster can be deduced from a high-resolution electron microscopy image of the Al–Co–Ni–Tb quasicrystal when the image is associated with a fivefold aperiodic tiling. By using the cut-and-projection method, a quasiperiodic tiling generated by an irrational projection is proposed as an ideal quasilattice of the Al–Co–Ni–Tb quasicrystal; in the meantime, periodic tilings generated by a rational projection present the lattices of the crystalline approximants.


Sign in / Sign up

Export Citation Format

Share Document