Periodic printed semi-annular substrate loaded TM01–TE11 mode converter

2020 ◽  
pp. 1-7
Author(s):  
Ashish Chittora ◽  
Swati Varun Yadav
Keyword(s):  
Conversion Efficiency ◽  
Mode Conversion ◽  
Circular Waveguide ◽  
Mode Converter ◽  
Space Applications ◽  
High Power Microwave ◽  
Relative Bandwidth ◽  
Measurement Results ◽  
Power Handling Capability ◽  
Lightweight Structure

Abstract A mode converter design using the concept of periodic substrates loading in a circular waveguide, to convert TM01 mode to TE11 mode is presented in this paper. The detailed design principle, simulation, and measurement results are included in this study. Simulation results show that the purity of output fundamental TE11 mode of the converter approaches 99.2% for an operating frequency of 3.2 GHz. The mode conversion efficiency is more than 90% over 3.07–3.25 GHz band and the relative bandwidth is 5.6% (180 MHz). The proposed TM01–TE11 mode converter has advantages, such as the compact, lightweight structure, high conversion efficiency, and proper bandwidth. The fabrication cost is relatively low and the structure is easy to fabricate. The power-handling capability is limited to 10 MW due to dielectric-based design. The compactness and portability of the system (e.g. Space applications, Accelerators, High Power Microwave) can be improved significantly using the proposed mode converter.

A compact high-power microwave TM01-TE01 mode converter

2021 ◽  
Vol 92 (9) ◽  
pp. 094703
Author(s):  
Yong-jun Hu ◽  
Liang Xu ◽  
Qiang Zhang ◽  
Cheng-wei Yuan ◽  
Jin-liang Liu ◽  
...  
Keyword(s):  
High Power ◽  
Mode Converter ◽  
High Power Microwave ◽  
Te01 Mode ◽  
Power Microwave

Application of circular waveguide couplers in high power microwave measurement

2014 ◽  
Vol 26 (6) ◽  
pp. 63040 ◽  
Author(s):  
孙钧 Sun Jun ◽  
胡咏梅 Hu Yongmei ◽  
张立刚 Zhang Ligang ◽  
滕雁 Teng Yan ◽  
宋志敏 Song Zhimin ◽  
...  
Keyword(s):  
High Power ◽  
Circular Waveguide ◽  
Microwave Measurement ◽  
High Power Microwave ◽  
Power Microwave

Circular waveguide TM01-TE11 mode converter

2014 ◽  
Vol 26 (8) ◽  
pp. 83003 ◽  
Author(s):  
张信歌 Zhang Xin’ge ◽  
李少甫 Li Shaofu ◽  
李波 Li Bo ◽  
邓渊 Deng Yuan ◽  
李雅楠 Li Ya’nan ◽  
...  
Keyword(s):  
Circular Waveguide ◽  
Mode Converter

scholarly journals Dual-band impedance transformation networks for integrated power amplifiers

2014 ◽  
Vol 8 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Robert Wolf ◽  
Niko Joram ◽  
Stefan Schumann ◽  
Frank Ellinger
Keyword(s):  
Output Power ◽  
Power Amplifiers ◽  
Design Procedure ◽  
Dual Band ◽  
Analysis Method ◽  
Large Signal ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Relative Bandwidth ◽  
Measurement Results

This paper shows that the two most common impedance transformation networks for power amplifiers (PAs) can be designed to achieve optimum transformation at two frequencies. Hence, a larger bandwidth for the required impedance transformation ratio is achieved. A design procedure is proposed, which takes imperfections like losses into account. Furthermore, an analysis method is presented to estimate the maximum uncompressed output power of a PA with respect to frequency. Based on these results, a fully integrated PA with a dual-band impedance transformation network is designed and its functionality is proven by large signal measurement results. The amplifier covers the frequency band from 450 MHz to 1.2 GHz (3 dB bandwidth of the output power and efficiency), corresponding to a relative bandwidth of more than 100%. It delivers 23.7 dBm output power in the 1 dB compression point, having a power-added efficiency of 33%.

scholarly journals A Programmable Impedance Tuner with a High Resolution Using a 0.18-um CMOS SOI Process for Improved Linearity

Electronics ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 7
Author(s):  
Younghwan Bae ◽  
Heesauk Jhon ◽  
Junghyun Kim
Keyword(s):  
Field Effect Transistors ◽  
Complementary Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Impedance Variation ◽  
Measurement Results ◽  
Power Handling Capability ◽  
Impedance Tuners ◽  
Step Over ◽  
Load Pull

In this paper, a novel coupler/reflection-type programmable electronic impedance tuner combined with switches that were fabricated by a 0.18-um complementary metal–oxide–semiconductor (CMOS) silicon-on-insulator (SOI) process is proposed for replacement of the conventional mechanical tuner in power amplifier (PA) load-pull test. By employing the multi-stacked field-effect transistors (FETs) as a single-branch switch, the proposed tuner has the advantage of precise impedance variation with systematic and magnitude and phase adjustment. Additionally, it led to high standing wave ratio (SWR) coverage and a good impedance resolution with a high power handling capability. Furthermore, the double-branch based on multi-stacked FET was applied to switches for additional enhancement of the intermodulation distortion (IMD) performance through the mitigated drain-source voltage of the single-FET. Drawing upon the measurement results, we demonstrated that SWR changed from 2 to 6 sequentially with a 12–15° phase angle step over a mid/high-band range of a 1.5–2.1 GHz band for 3G/4G handset application. In addition, the PA load-pull measurement results obtained using the proposed tuners verified their practicality and competitive performance with mechanical tuners. Finally, the measured linearity using the double-branch switch demonstrated the good IMD3 performance of −78 dBc, and this result is noteworthy when compared with conventional electronic impedance tuners.

A High-Power Orthogonal Over-Mode Circular Waveguide TE11-TM01 Mode Converter

2017 ◽  
Vol 27 (12) ◽  
pp. 1095-1097 ◽  
Author(s):  
Xiao-Meng Li ◽  
Jian-Qiong Zhang ◽  
Xiang-Qiang Li ◽  
Qing-Xiang Liu
Keyword(s):  
High Power ◽  
Circular Waveguide ◽  
Mode Converter
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