Kinetics of Plasmon-Driven Hydrosilylation of Silicon Surfaces: Photogenerated Charges Drive Silicon–Carbon Bond Formation

Author(s):  
Chengcheng Rao ◽  
Brian C. Olsen ◽  
Erik J. Luber ◽  
Jillian M. Buriak
2021 ◽  
Author(s):  
Chengcheng Rao ◽  
Brian Olsen ◽  
Erik Luber ◽  
Jillian Buriak

Optically transparent PDMS stamps coated with a layer of gold nanoparticles were employed as plasmonic stamps to drive surface chemistry on silicon surfaces. Illumination of a sandwich of plasmonic stamps, an alkene ink, and hydride-terminated silicon with green light of moderate intensity drives hydrosilylation on the surface. The key to the mechanism of the hydrosilylation is the presence of holes at the Si-H-terminated interface, which is followed by attack by a proximal alkene and formation of the silicon-carbon bond. In this work, detailed kinetic studies of the hydrosilylation on silicon with different doping levels, n++, p++, n, p, and intrinsic were carried out to provide further insight into the role of the metal-insulator-semiconductor (MIS) junction that is set up during the stamping.


2021 ◽  
Author(s):  
Chengcheng Rao ◽  
Brian Olsen ◽  
Erik Luber ◽  
Jillian Buriak

Optically transparent PDMS stamps coated with a layer of gold nanoparticles were employed as plasmonic stamps to drive surface chemistry on silicon surfaces. Illumination of a sandwich of plasmonic stamps, an alkene ink, and hydride-terminated silicon with green light of moderate intensity drives hydrosilylation on the surface. The key to the mechanism of the hydrosilylation is the presence of holes at the Si-H-terminated interface, which is followed by attack by a proximal alkene and formation of the silicon-carbon bond. In this work, detailed kinetic studies of the hydrosilylation on silicon with different doping levels, n++, p++, n, p, and intrinsic were carried out to provide further insight into the role of the metal-insulator-semiconductor (MIS) junction that is set up during the stamping.


2010 ◽  
Vol 29 (16) ◽  
pp. 3490-3499 ◽  
Author(s):  
Marcel Kahnes ◽  
Helmar Görls ◽  
Matthias Westerhausen

1975 ◽  
Vol 85 (1) ◽  
pp. C1-C3 ◽  
Author(s):  
Hideyuki Matsumoto ◽  
Shigeru Nagashima ◽  
Kazuo Yoshihiro ◽  
Yoichiro Nagai

2018 ◽  
pp. 1003-1014
Author(s):  
Lawrence A. Huck ◽  
Minjia Hu ◽  
Jillian M. Buriak

2017 ◽  
pp. 1-12
Author(s):  
Lawrence A. Huck ◽  
Minjia Hu ◽  
Jillian M. Buriak

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