Impact of Anchoring Monolayers on the Enhancement of Radiative Recombination in Light-Emitting Diodes Based on Silicon Nanocrystals

2018 ◽  
Vol 122 (11) ◽  
pp. 6422-6430 ◽  
Author(s):  
Batu Ghosh ◽  
Takumi Hamaoka ◽  
Yoshihiro Nemoto ◽  
Masaki Takeguchi ◽  
Naoto Shirahata
2018 ◽  
Vol 53 ◽  
pp. 01035
Author(s):  
Shulv Zhang ◽  
Yuhang Yin ◽  
Weiling Luan ◽  
Mengke Liu

Inorganic perovskite light-emitting diodes (PeLEDs) with full coverage and compact films were realized by doping a certain amount of PEO into perovskite emitting layer. The additive PEO (Polyethylene oxide) can not only improve the coverage of films by physically filling the pin-holes of crystal boundaries but also act as a protective layer to passivate the films, which successfully reduce the rate of non-radiative recombination, and enhance photoluminescence quantum yield (PLQY) of the CsPbBr3 films. In addition, PEO can also decrease the surface roughness of the perovskite films. As a result, the addition of PEO can improve the transport capability of carriers in PeLEDs. By optimizing the concentration of PEO, a maximum external quantum efficiency (EQE) of 0.26% and brightness of 1432 cd/m2 were achieved, which is significantly improved compared with previous work. The results presented in this paper shows that the additive PEO in perovskite precursor solution paves a new way for the application in PeLEDs.


2002 ◽  
Vol 743 ◽  
Author(s):  
Maxim Shatalov ◽  
Vinod Adivarahan ◽  
Jian Ping Zhang ◽  
Ashay Chitnis ◽  
Shuai Wu ◽  
...  

ABSTRACTWe present a study of the electrical and optical characteristics of 280 nm emission deep ultraviolet light emitting diodes (LED) at room and cryogenic temperatures. At low bias the defect assisted carrier tunneling primarily determines the current conduction. The room-temperature spectral performance and optical power are limited mostly by pronounced deep level defect assisted radiative and non-radiative recombination as well as poor electron confinement in the active region. At temperatures below 100 K the electroluminescence peak intensity increases by more than one order of magnitude due to suppression of non-radiative recombination channels indicating that with a proper device design and improved material quality, milliwatt power 280 nm LED are viable.


Nanoscale ◽  
2015 ◽  
Vol 7 (40) ◽  
pp. 16658-16665 ◽  
Author(s):  
Chao Zhao ◽  
Tien Khee Ng ◽  
Aditya Prabaswara ◽  
Michele Conroy ◽  
Shafat Jahangir ◽  
...  

An organic passivation process for nitride nanowires was first proposed to reduce Shockley–Read–Hall non-radiative recombination of nanowire light emitting diodes.


2015 ◽  
Vol 117 (24) ◽  
pp. 245704 ◽  
Author(s):  
J. D. Gallagher ◽  
C. L. Senaratne ◽  
C. Xu ◽  
P. Sims ◽  
T. Aoki ◽  
...  

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