An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination
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An organic passivation process for nitride nanowires was first proposed to reduce Shockley–Read–Hall non-radiative recombination of nanowire light emitting diodes.
2018 ◽
Vol 122
(11)
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pp. 6422-6430
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2018 ◽
Vol 34
(14)
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pp. 1615-1630
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2020 ◽
Vol 12
(28)
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pp. 31582-31590
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