scholarly journals Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

Nano Letters ◽  
2015 ◽  
Vol 15 (9) ◽  
pp. 5791-5798 ◽  
Author(s):  
Rusen Yan ◽  
Sara Fathipour ◽  
Yimo Han ◽  
Bo Song ◽  
Shudong Xiao ◽  
...  
Keyword(s):  
Energy Band ◽  
Van Der Waals ◽  
Band Alignment ◽  
Gap Energy ◽  
Broken Gap

PbI2–MoS2 Heterojunction: van der Waals Epitaxial Growth and Energy Band Alignment

2019 ◽  
Vol 10 (15) ◽  
pp. 4203-4208 ◽  
Author(s):  
Junting Xiao ◽  
Jinxin Liu ◽  
Kuanglv Sun ◽  
Yuan Zhao ◽  
Ziyi Shao ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Energy Band ◽  
Van Der Waals ◽  
Band Alignment

Broken-Gap Type-III Band Alignment in WTe2/HfS2 van der Waals Heterostructure

2019 ◽  
Vol 123 (37) ◽  
pp. 23089-23095 ◽  
Author(s):  
Chengan Lei ◽  
Yandong Ma ◽  
Xilong Xu ◽  
Ting Zhang ◽  
Baibiao Huang ◽  
...  
Keyword(s):  
Van Der Waals ◽  
Band Alignment ◽  
Type Iii ◽  
Van Der Waals Heterostructure ◽  
Broken Gap

A first-principles study on the electronic and optical properties of a type-II C2N/g-ZnO van der Waals heterostructure

2021 ◽  
Vol 23 (6) ◽  
pp. 3963-3973
Author(s):  
Jianxun Song ◽  
Hua Zheng ◽  
Minxia Liu ◽  
Geng Zhang ◽  
Dongxiong Ling ◽  
...  
Keyword(s):  
Optical Properties ◽  
Dft Calculations ◽  
First Principles ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, electronic and optical properties of a new vdW heterostructure, C2N/g-ZnO, with an intrinsic type-II band alignment and a direct bandgap of 0.89 eV at the Γ point are extensively studied by DFT calculations.

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

scholarly journals Electric-dipole effect of defects on the energy band alignment of rutile and anatase TiO2

2015 ◽  
Vol 17 (43) ◽  
pp. 29079-29084 ◽  
Author(s):  
Daoyu Zhang ◽  
Minnan Yang ◽  
Shuai Dong
Keyword(s):  
Electric Dipole ◽  
Energy Band ◽  
Anatase Tio2 ◽  
Band Alignment ◽  
Type Band

DFT+U calculations determined that the perfect rutile(110) and anatase(101) surfaces have the straddling type band alignment, whereas surfaces with defects have the staggered type.

PbTiO3/SrTiO3interface: Energy band alignment and its relation to the limits of Fermi level variation

2011 ◽  
Vol 84 (4) ◽  
Author(s):  
Robert Schafranek ◽  
Shunyi Li ◽  
Feng Chen ◽  
Wenbin Wu ◽  
Andreas Klein
Keyword(s):  
Fermi Level ◽  
Energy Band ◽  
Band Alignment ◽  
Level Variation

Electron energy band alignment at the (100)Si/MgO interface

2010 ◽  
Vol 96 (5) ◽  
pp. 052103 ◽  
Author(s):  
V. V. Afanas’ev ◽  
A. Stesmans ◽  
K. Cherkaoui ◽  
P. K. Hurley
Keyword(s):  
Electron Energy ◽  
Energy Band ◽  
Band Alignment
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