Interfacial Coordination Nanosheet Based on Nonconjugated Three-Arm Terpyridine: A Highly Color-Efficient Electrochromic Material to Converge Fast Switching with Long Optical Memory

2020 ◽  
Vol 12 (31) ◽  
pp. 35181-35192 ◽  
Author(s):  
Susmita Roy ◽  
Chanchal Chakraborty
Keyword(s):  
Optical Memory ◽  
Fast Switching ◽  
Electrochromic Material

Novel tunneled phosphorus-doped WO3 films achieved using ignited red phosphorus for stable and fast switching electrochromic performances

Nanoscale ◽  
2019 ◽  
Vol 11 (7) ◽  
pp. 3318-3325 ◽  
Author(s):  
Koo Bon-Ryul ◽  
Kue-Ho Kim ◽  
Hyo-Jin Ahn
Keyword(s):  
Red Phosphorus ◽  
Fast Switching ◽  
Electrochromic Material ◽  
Phosphorus Doped

Novel tunneled phosphorus (P)-doped WO3 films developed using ignited red P are a valuable electrochromic material with stable fast-switching performances.

Optical memory: What a difference

2010 ◽  
Keyword(s):  
Optical Memory

SPATIAL CHAOS AND OPTICAL MEMORY

1988 ◽  
Vol 49 (C2) ◽  
pp. C2-451-C2-454
Author(s):  
W. J. FIRTH
Keyword(s):  
Optical Memory ◽  
Spatial Chaos

Iron Loss Characteristics of Motors Fed by Fast Switching GaN-FET Inverters

2020 ◽  
Vol 140 (6) ◽  
pp. 488-494
Author(s):  
Haruo Naitoh ◽  
Takaya Sugimoto ◽  
Keisuke Fujisaki
Keyword(s):  
Iron Loss ◽  
Fast Switching ◽  
Gan Fet

Prediction of Birefringence for Optical Memory Disk

1989 ◽  
Vol 4 (3) ◽  
pp. 132-142 ◽  
Author(s):  
T. Kanai ◽  
K. Shimizu ◽  
Y. Uryu
Keyword(s):  
Optical Memory

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

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