Detail specification for silicon fast switching, double ended diodes

1971 ◽  
Keyword(s):  
Fast Switching

Iron Loss Characteristics of Motors Fed by Fast Switching GaN-FET Inverters

2020 ◽  
Vol 140 (6) ◽  
pp. 488-494
Author(s):  
Haruo Naitoh ◽  
Takaya Sugimoto ◽  
Keisuke Fujisaki
Keyword(s):  
Iron Loss ◽  
Fast Switching ◽  
Gan Fet

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

High-Density Memristor-CMOS Ternary Logic Family

2020 ◽  
Author(s):  
Xiaoyuan Wang ◽  
Pengfei Zhou ◽  
Jason Eshraghian ◽  
Chih-Yang Lin ◽  
Herbert Ho-Ching Iu ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Practical Implementation ◽  
Switching Speed ◽  
High Data ◽  
Fast Switching ◽  
Data Density ◽  
Order Of Magnitude ◽  
High Transconductance ◽  
Logic Functions ◽  
Magnitude Improvement

<div>This paper presents the first experimental demonstration</div><div>of a ternary memristor-CMOS logic family. We systematically</div><div>design, simulate and experimentally verify the primitive</div><div>logic functions: the ternary AND, OR and NOT gates. These are then used to build combinational ternary NAND, NOR, XOR and XNOR gates, as well as data handling ternary MAX and MIN gates. Our simulations are performed using a 50-nm process which are verified with in-house fabricated indium-tin-oxide memristors, optimized for fast switching, high transconductance, and low current leakage. We obtain close to an order of magnitude improvement in data density over conventional CMOS logic, and a reduction of switching speed by a factor of 13 over prior state-of-the-art ternary memristor results. We anticipate extensions of this work can realize practical implementation where high data density is of critical importance.</div>

Review on Switches for Power Applications: Macro to Micro

2019 ◽  
Vol 12 (3) ◽  
pp. 200-209
Author(s):  
Femi Robert
Keyword(s):  
Leakage Current ◽  
Power Loss ◽  
Low Cost ◽  
Electrical System ◽  
High Isolation ◽  
Fast Switching ◽  
Environmental Friendly ◽  
State Resistance ◽  
Very High ◽  
Bulk Production

Background: Switches are important component in electrical system. The switches needs to have the advantages of low ON-state resistance, very high OFF-state resistance, high isolation, no leakage current, less power loss, fast switching, high linearity, small size, arcless and low cost in bulk production. Also these switches have to be reliable and environmental friendly. Methods: In this paper, macro and microswitches for power applications are extensively reviewed and summarized. Various types of switches such as mechanical, solid-state, hybrid and micromechanical switches have been used for power applications are reviewed. The importance and challenge in achieving arcless switching is presented. Results: The use of micromechanical switches for power applications, actuation techniques, switching modes, reliability and lifetime are also reviewed. The modeling and design challenges are also reviewed. Conclusion: The applications of micromechanical switches shows that the switches can reduce the leakage current in battery operated systems and reduce the size of the system considerably.

scholarly journals Dynamical phase diagram of an auto-regulating gene in fast switching conditions

2020 ◽  
Vol 152 (17) ◽  
pp. 174110 ◽  
Author(s):  
Chen Jia ◽  
Ramon Grima
Keyword(s):  
Phase Diagram ◽  
Dynamical Phase ◽  
Fast Switching

Optimum protocol for fast-switching free-energy calculations

2010 ◽  
Vol 81 (2) ◽  
Author(s):  
Philipp Geiger ◽  
Christoph Dellago
Keyword(s):  
Free Energy ◽  
Free Energy Calculations ◽  
Energy Calculations ◽  
Fast Switching

Dynamical systems under random perturbations with fast switching and slow diffusion: Hyperbolic equilibria and stable limit cycles

2021 ◽  
Vol 293 ◽  
pp. 313-358
Author(s):  
Nguyen H. Du ◽  
Alexandru Hening ◽  
Dang H. Nguyen ◽  
George Yin
Keyword(s):  
Dynamical Systems ◽  
Limit Cycles ◽  
Random Perturbations ◽  
Stable Limit ◽  
Fast Switching ◽  
Slow Diffusion ◽  
Stable Limit Cycles

Unidirectional switching of magnetic vortex core in a nanocavity mediated nanodisk: Looking for a reliable low-power-driven and fast switching in terms of geometric parameters

2021 ◽  
Vol 527 ◽  
pp. 167758
Author(s):  
Xiao-Ping Ma ◽  
Ming-Xuan Cai ◽  
Je-Ho Shim ◽  
Hong-Guang Piao ◽  
Dong-Hyun Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Vortex Core ◽  
Geometric Parameters ◽  
Magnetic Vortex ◽  
Fast Switching
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